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首页> 外文期刊>Advanced Functional Materials >Near-Infrared Saturable Absorption of Defective Bulk-Structured WTe2 for Femtosecond Laser Mode-Locking
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Near-Infrared Saturable Absorption of Defective Bulk-Structured WTe2 for Femtosecond Laser Mode-Locking

机译：飞秒激光锁模的缺陷大体积WTe2的近红外饱和吸收

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摘要

Mono- and few-layer transition metal dichalcogenides (TMDCs) have been widely used as saturable absorbers for ultrashort laser pulse generation, but their preparation is complicated and requires much expertise. The possible use of bulk-structured TMDCs as saturable absorbers is therefore a very intriguing and technically important issue in laser technology. Here, for the first time, it is demonstrated that defective, bulk-structured WTe2 microflakes can serve as a base saturable absorption material for fast mode-lockers that can produce femtosecond pulses from fiber laser cavities. They have a modulation depth of 2.85%, from which stable laser pulses with a duration of 770 fs are readily obtained at a repetition rate of 13.98 MHz and a wavelength of 1556.2 nm, which is comparable to the performance achieved using mono-and few-layer TMDCs. Density functional theory calculations show that the oxidative and defective surfaces of WTe2 microflakes do not degrade their saturable absorption performance in the near-infrared range, allowing for a broad range of operative bandwidth. This study suggests that saturable absorption is an intrinsic property of TMDCs without relying on their structural dimensionality, providing a new direction for the development of TMDC-based saturable absorbers.
机译：单层和多层过渡金属二硫化碳（TMDC）已被广泛用作可产生超短激光脉冲的饱和吸收剂，但它们的制备很复杂，需要很多专业知识。因此，在激光技术中，将体结构TMDC用作可饱和吸收体是一个非常吸引人的技术上重要的问题。在这里，首次证明有缺陷的块状WTe2微米薄片可以用作快速锁模器的基础可饱和吸收材料，该锁模器可以从光纤激光腔产生飞秒脉冲。它们的调制深度为2.85％，从中可以很容易地以13.98 MHz的重复频率和1556.2 nm的波长获得持续时间为770 fs的稳定激光脉冲，这与使用单脉冲和少量脉冲获得的性能相当。层TMDC。密度泛函理论计算表明，WTe2薄片的氧化表面和有缺陷的表面在近红外范围内不会降低其饱和吸收性能，从而可提供宽范围的工作带宽。这项研究表明，可饱和吸收是TMDC的固有特性，而不依赖于它们的结构尺寸，这为基于TMDC的可饱和吸收剂的发展提供了新的方向。

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  • 来源
    《Advanced Functional Materials》 |2016年第41期|7454-7461|共8页
  • 作者

    Koo Joonhoi; Jhon Young In; Park June; Lee Junsu; Jhon Young Min; Lee Ju Han;

  • 作者单位

    Univ Seoul, Sch Elect & Comp Engn, 163 Seoulsiripdae Ro, Seoul 02504, South Korea;

    Korea Inst Sci & Technol, Sensor Syst Res Ctr, Hwarang Ro 14 Gil 5, Seoul 02792, South Korea;

    Korea Photon Technol Inst, Ultra Precis Opt Res Sect, Gwangju 61007, South Korea;

    Univ Seoul, Sch Elect & Comp Engn, 163 Seoulsiripdae Ro, Seoul 02504, South Korea;

    Korea Inst Sci & Technol, Sensor Syst Res Ctr, Hwarang Ro 14 Gil 5, Seoul 02792, South Korea;

    Univ Seoul, Sch Elect & Comp Engn, 163 Seoulsiripdae Ro, Seoul 02504, South Korea;

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