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Plasmonic Nanowire-Enhanced Upconversion Luminescence for Anticounterfeit Devices

机译：等离子纳米线增强的上转换发光用于防伪设备

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摘要

A novel, efficient, cost-effective, and high-level security performance anticounterfeit device achieved by plasmonic-enhanced upconversion luminescence (UCL) is demonstrated. The plasmonic architecture consists of the randomly dispersed Ag nanowires (AgNWs) network, upconversion nanoparticles (UCNPs) monolayer, and metal film, in which the UCL is enhanced by a few tens, compared to reference sample, becuase the plasmonic modes lead to the concentration of the incident near infrared (NIR) light in the UCNPs monolayer. In the configuration, both the localized surface plasmons (LSPs) around the metallic nanostructures and gap plasmon polaritons (GPPs) confined in the UCNPs monolayer, significantly contribute to the UCL enhancement. The UCL enhancement mechanism resulting from enhanced NIR absorption, boosted internal quantum process, and formation of strong plasmonic hot spots in the plasmonic architecture is analyzed theoretically and numerically. More interestingly, a proof-of-concept anticounterfeit device using the plasmonic-enhanced UCL is proposed, through which a nonreusable and high-level cost-effective security device protecting the genuine products is realized.
机译：通过等离子体增强的上转换发光（UCL）实现了一种新颖，高效，具有成本效益的高级安全性能防伪设备。等离子体结构由随机分散的Ag纳米线（AgNWs）网络，上转换纳米颗粒（UCNPs）单层和金属膜组成，与参考样品相比，其中的UCL增强了几十倍，因为等离子体模式会导致浓缩UCNPs单层中入射近红外（NIR）光的分布。在该配置中，金属纳米结构周围的局部表面等离激元（LSP）和UCNPs单层中的间隙等离激元极化子（GPPs）都极大地促进了UCL的提高。从理论上和数值上分析了由近红外吸收增强，内部量子过程增强以及在等离子体结构中形成强等离子体热点导致的UCL增强机制。更有趣的是，提出了一种使用等离激元增强型UCL的概念验证防伪装置，通过该装置，可以实现保护正版产品的不可重复使用且具有较高成本效益的安全装置。

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  • 来源
    《Advanced Functional Materials》 |2016年第43期|7836-7846|共11页
  • 作者

    Park Kisun; Jung Kinam; Kwon Seok Joon; Jang Ho Seong; Byun Dongjin; Han Il Ki; Ko Hyungduk;

  • 作者单位

    Korea Inst Sci & Technol, Nanophoton Res Ctr, Hwarangno 14 Gil 5, Seoul 02792, South Korea|Korea Univ, Mat Sci & Engn, 145 Anam Ro, Seoul 02841, South Korea;

    Korea Inst Sci & Technol, Nanophoton Res Ctr, Hwarangno 14 Gil 5, Seoul 02792, South Korea;

    Korea Inst Sci & Technol, Nanophoton Res Ctr, Hwarangno 14 Gil 5, Seoul 02792, South Korea;

    Korea Inst Sci & Technol, Mat Architecturing Res Ctr, Hwarangno 14 Gil 5, Seoul 02792, South Korea;

    Korea Univ, Mat Sci & Engn, 145 Anam Ro, Seoul 02841, South Korea;

    Korea Inst Sci & Technol, Nanophoton Res Ctr, Hwarangno 14 Gil 5, Seoul 02792, South Korea;

    Korea Inst Sci & Technol, Nanophoton Res Ctr, Hwarangno 14 Gil 5, Seoul 02792, South Korea;

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