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Systematic Study of Widely Applicable N-Doping Strategy for High-Performance Solution-Processed Field-Effect Transistors

机译：高性能溶液处理场效应晶体管的广泛应用N掺杂策略的系统研究

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摘要

A specific design for solution-processed doping of active semiconducting materials would be a powerful strategy in order to improve device performance in flexible and/or printed electronics. Tetrabutylammonium fluoride and tetrabutylammonium hydroxide contain Lewis base anions, F- and OH-, respectively, which are considered as organic dopants for efficient and cost-effective n-doping processes both in n-type organic and nanocarbon-based semiconductors, such as poly[[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)] (P(NDI2OD-T2)) and selectively dispersed semiconducting single-walled carbon nanotubes by p-conjugated polymers. The dramatic enhancement of electron transport properties in field-effect transistors is confirmed by the effective electron transfer from the dopants to the semiconductors as well as controllable onset and threshold voltages, convertible charge-transport polarity, and simultaneously showing excellent device stabilities under ambient air and bias stress conditions. This simple solution-processed chemical doping approach could facilitate the understanding of both intrinsic and extrinsic charge transport characteristics in organic semiconductors and nanocarbon-based materials, and is thus widely applicable for developing high-performance organic and printed electronics and optoelectronics devices.
机译：为了改善柔性和/或印刷电子设备的器件性能，用于有源半导体材料的固溶处理掺杂的特定设计将是一种有效的策略。四丁基氟化铵和四丁基氢氧化铵分别包含路易斯碱阴离子F-和OH-，它们被认为是n型有机和纳米碳基半导体（例如聚[ [N，N'-双（2-辛基十二烷基）-萘-1,4,5,8-双（二​​甲叉酰亚胺）-2,6-二基] -alt-5,5'-（2,2'-联噻吩） （P（NDI2OD-T2））和通过p共轭聚合物选择性分散的半导体单壁碳纳米管。场效应晶体管中电子传输性能的显着提高，可通过从掺杂剂到半导体的有效电子转移以及可控的起始电压和阈值电压，可转换的电荷传输极性以及在环境空气和高温下同时显示出出色的器件稳定性来证实偏压力条件。这种简单的溶液处理化学掺杂方法可以促进对有机半导体和纳米碳基材料中本征和非本征电荷传输特性的理解，因此可广泛用于开发高性能有机和印刷电子以及光电器件。

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  • 来源
    《Advanced Functional Materials》 |2016年第43期|7886-7894|共9页
  • 作者

    Kim Jihong; Khim Dongyoon; Baeg Kang-Jun; Park Won-Tae; Lee Seung-Hoon; Kang Minji; Noh Yong-Young; Kim Dong-Yu;

  • 作者单位

    Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, 123 Cheomdangwagi Ro, Gwangju 61005, South Korea;

    Imperial Coll London, Dept Phys, South Kensington Campus, London SW7 2AZ, England;

    Pukyong Natl Univ, Dept Graph Arts Informat Engn, Busan 48547, South Korea;

    Dongguk Univ, Dept Energy & Mat Engn, 30 Pildong Ro 1 Gil, Seoul 04620, South Korea;

    Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, 123 Cheomdangwagi Ro, Gwangju 61005, South Korea;

    Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, 123 Cheomdangwagi Ro, Gwangju 61005, South Korea;

    Dongguk Univ, Dept Energy & Mat Engn, 30 Pildong Ro 1 Gil, Seoul 04620, South Korea;

    Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, 123 Cheomdangwagi Ro, Gwangju 61005, South Korea;

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