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Quinoidal Molecules as a New Class of Ambipolar Semiconductor Originating from Amphoteric Redox Behavior

机译：源自两性氧化还原行为的新型双极性半导体的喹啉分子

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摘要

The two small molecules, quinoidal bithiophene (QBT) and quinoidal bisele-nophene (QBS), are designed based on a quinoid structure, and synthesized via a facile synthetic route. These quinoidal molecules have a reduced band gap and an amphoteric redox behavior, which is caused by an extended delocaliza-tion. Due to such properties, organic field-effect transistors based on QBT and QBS have shown balanced ambipolar characteristics. After thermal annealing, the performances of the devices are enhanced by an increase in crystallinity. The field-effect hole and electron mobilities are measured to be 0.031 cm~2 V~(-1) s~(-1) and 0.005 cm~2 V~(-1) s~(-1) for QBT, and 0.055 cm~2 V~(-1) s~(-1) and 0.021 cm~2 V~(-1) s~(-1) for QBS, respectively. In addition, we investigate the effect of chalcogen atoms (S and Se) on the molecular properties. The optical, electrochemical properties and electronic structures are mainly dominated by the quinoidal structure, whereas molecular properties are scarcely affected by either type of chalcogen atom. The main effect of the chalcogen atoms is ascribed to the difference of crystallinity. Due to a strong intermolecular interaction of the selenophene, QBS exhibits a higher degree of crystallinity, which leads to an enhancement of both hole and electron mobilities. Consequently, these types of quinoidal molecules are found to be promising for use as ambipolar semiconductors.
机译：醌型二噻吩（QBT）和醌型双elenophene（QBS）这两个小分子是基于醌型结构设计的，并通过简便的合成途径进行合成。这些醌型分子具有减小的带隙和两性氧化还原行为，这是由扩展的离域作用引起的。由于这种特性，基于QBT和QBS的有机场效应晶体管表现出平衡的双极特性。在热退火之后，通过增加结晶度来增强器件的性能。 QBT的场效应空穴和电子迁移率分别为0.031 cm〜2 V〜（-1）s〜（-1）和0.005 cm〜2 V〜（-1）s〜（-1），0.055 QBS的cm〜2 V〜（-1）s〜（-1）和0.021 cm〜2 V〜（-1）s〜（-1）。此外，我们研究了硫族原子（S和Se）对分子特性的影响。光学，电化学性质和电子结构主要由喹啉结构决定，而分子性质几乎不受任何一种硫族元素原子的影响。硫族元素原子的主要作用归因于结晶度的差异。由于硒烯之间的强分子间相互作用，QBS表现出更高的结晶度，从而导致空穴迁移率和电子迁移率的提高。因此，发现这些类型的醌型分子有望用作双极性半导体。

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  • 来源
    《Advanced Functional Materials》 |2015年第7期|1146-1156|共11页
  • 作者

    Hansu Hwang; Dongyoon Khim; Jin-Mun Yun; Eunhwan Jung; Soo-Young Jang; Yun Hee Jang; Yong-Young Noh; Dong-Yu Kim;

  • 作者单位

    School of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;

    School of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea,Department of Energy and Materials Engineering Dongguk University 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea;

    Radiation Research Division for Industry and Environment Korea Atomic Energy Research Institute (KAERI) 29 Geumgu-gil, Jeongeup-si, Jeollabuk-do 580-185, Republic of Korea;

    School of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;

    School of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;

    School of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;

    Department of Energy and Materials Engineering Dongguk University 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea;

    School of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;

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