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Kinetic Monte Carlo Study of the Sensitivity of OLED Efficiency and Lifetime to Materials Parameters

机译：OLED效率和寿命对材料参数敏感性的动力学蒙特卡洛研究

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摘要

The performance of organic light-emitting diodes (OLEDs) is determined by a complex interplay of the optoelectronic processes in the active layer stack. In order to enable simulation-assisted layer stack development, a three-dimensional kinetic Monte Carlo OLED simulation method which includes the charge transport and all excitonic processes is developed. In this paper, the results are presented of simulations including degradation processes in idealized but realizable phosphorescent OLEDs. Degradation is treated as a result of the conversion of emitter molecules to non-emissive sites upon a triplet-polaron quenching (TPQ) process. Under the assumptions made, TPQ provides the dominant contribution to the roll-off. There is therefore a strong relationship between the roll-off and the lifetime. This is quantified using a "uniform density model", within which the charge carrier and exciton densities are assumed to be uniform across the emissive layer. The simulations give rise to design rules regarding the energy levels, and are used to study the sensitivity of the roll-off and lifetime to various other materials parameters, including the mobility, the phosphorescent dye concentration, the triplet exciton emissive lifetime and binding energy, and the type of TPQ process.
机译：有机发光二极管（OLED）的性能取决于有源层堆叠中光电过程的复杂相互作用。为了能够进行仿真辅助的层堆叠开发，开发了包括电荷传输和所有激子过程的三维动力学蒙特卡洛OLED仿真方法。在本文中，给出了仿真结果，包括在理想化但可实现的磷光OLED中的降解过程。由于三重态-极化子猝灭（TPQ）过程中发射极分子向非发射位点的转化而导致降解。在做出的假设下，TPQ为滚降提供了主要贡献。因此，滚降和寿命之间存在很强的关系。使用“均匀密度模型”对此进行了量化，在该模型中，假定载流子和激子密度在整个发射层上是均匀的。这些模拟产生了有关能级的设计规则，并用于研究滚降和寿命对各种其他材料参数的敏感性，包括迁移率，磷光染料浓度，三重态激子发射寿命和结合能，以及TPQ流程的类型。

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  • 来源
    《Advanced Functional Materials》 |2015年第13期|2024-2037|共14页
  • 作者

    Reinder Coehoorn; Harm van Eersel; Peter A. Bobbert; Rene A. J. Janssen;

  • 作者单位

    Philips Research Laboratories High Tech Campus 4, 5656AE, Eindhoven The Netherlands,Department of Applied Physics Eindhoven University of Technology, P.O. Box 513 5600MB, Eindhoven, The Netherlands;

    Philips Research Laboratories High Tech Campus 4, 5656AE, Eindhoven The Netherlands,Department of Applied Physics Eindhoven University of Technology, P.O. Box 513 5600MB, Eindhoven, The Netherlands;

    Department of Applied Physics Eindhoven University of Technology, P.O. Box 513 5600MB, Eindhoven, The Netherlands;

    Department of Applied Physics Eindhoven University of Technology, P.O. Box 513 5600MB, Eindhoven, The Netherlands;

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