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首页> 外文期刊>Advanced Functional Materials >Soft Graphoepitaxy for Large Area Directed Self-Assembly of Polystyrene-block-Poly(dimethylsiloxane) Block Copolymer on Nanopatterned POSS Substrates Fabricated by Nanoimprint Lithography
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Soft Graphoepitaxy for Large Area Directed Self-Assembly of Polystyrene-block-Poly(dimethylsiloxane) Block Copolymer on Nanopatterned POSS Substrates Fabricated by Nanoimprint Lithography

机译：纳米压印光刻技术制备的纳米图案POSS衬底上的聚苯乙烯嵌段聚二甲基硅氧烷嵌段共聚物大面积定向自组装的软石墨外延

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摘要

Polyhedral oligomeric silsequioxane (POSS) derivatives have been successfully employed as substrates for graphoepitaxial directed self-assembly (DSA) of block copolymers (BCPs). Tailored POSS materials of tuned surface chemistry are subject to nanoimprint lithography (NIL) resulting in topographically patterned substrates with dimensions commensurate with the BCP block length. A cylinder forming polystyrene-block-polydimethylsiloxane (PS-b-PDMS) BCP is synthesized by sequential living anionic polymerization of styrene and hexamethylcyclotrisiloxane. The patterned POSS materials provide a surface chemistry and topography for DSA of this BCP and after solvent annealing the BCP shows well-ordered microphase segregation. The orientation of the PDMS cylinders to the substrate plane could be controlled within the trench walls by the choice of the POSS materials. The BCP patterns are successfully used as on-chip etch mask to transfer the pattern to underlying silicon substrate. This soft graphoepitaxy method shows highly promising results as a means to generate lithographic quality patterns by nonconventional methods and could be applied to both hard and soft substrates. The methodology might have application in several fields including device and interconnect fabrication, nanoimprint lithography stamp production, nanofluidic devices, lab-on-chip, or in other technologies requiring simple nanodimensional patterns.
机译：多面体低聚倍半硅氧烷（POSS）衍生物已成功地用作嵌段共聚物（BCP）的石墨外延定向自组装（DSA）的底物。调整后的表面化学量身定制的POSS材料将受到纳米压印光刻（NIL）的影响，从而形成尺寸与BCP块长相对应的地形图案化基板。通过苯乙烯和六甲基环三硅氧烷的连续活性阴离子聚合，合成了圆柱状聚苯乙烯嵌段聚二甲基硅氧烷（PS-b-PDMS）BCP。图案化的POSS材料为该BCP的DSA提供了表面化学和形貌，并且在溶剂退火后BCP显示出有序的微相偏析。通过选择POSS材料，可以在沟槽壁内控制PDMS圆柱体相对于基板平面的定向。 BCP图案已成功用作芯片上蚀刻掩模，以将图案转移到下面的硅基板上。这种软石墨外延方法作为一种通过非常规方法生成光刻质量图案的方法，显示出非常有希望的结果，并且可以应用于硬质和软质基材。该方法可以在多个领域中应用，包括器件和互连制造，纳米压印光刻印模生产，纳米流体器件，芯片实验室，或其他需要简单纳米尺寸图案的技术。

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