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首页> 外文期刊>Advanced Functional Materials >Self-Assembled, Millimeter-Sized TIPS-Pentacene Spherulites Grown on Partially Crosslinked Polymer Gate Dielectric
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Self-Assembled, Millimeter-Sized TIPS-Pentacene Spherulites Grown on Partially Crosslinked Polymer Gate Dielectric

机译：在部分交联的聚合物栅介质上生长的自组装毫米大小的TIPS-并五苯球晶

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摘要

Here, a highly crystalline and self-assembled 6,13-bis(triisopropylsilyleth ynyl) pentacene (TIPS-Pentacene) thin films formed by simple spin-coating for the fabrication of high-performance solution-processed organic field-effect transistors (OFETs) are reported. Rather than using semiconducting organic small-molecule-insulating polymer blends for an active layer of an organic transistor, TIPS-Pentacene organic semiconductor is separately self-assembled on partially crosslinked poly-4-vinylphenol:poly(melamine-co-formaldehyde) (PVP:PMF) gate dielectric, which results in a vertically segregated semiconductor-dielectric film with millimeter-sized spherulite-crystalline morphology of TIPS-Pentacene. The structural and electrical properties of TIPS-Pentacene/PVP:PMF films have been studied using a combination of polarized optical microscopy, atomic force microscopy, 2D-grazing incidence wide-angle X-ray scattering, and secondary ion mass spectrometry. It is finally demonstrated a high-performance OFETs with a maximum hole mobility of 3.40 cm(2) V-1 s(-1) which is, to the best of our knowledge, one of the highest mobility values for TIPS-Pentacene OFETs fabricated using a conventional solution process. It is expected that this new deposition method would be applicable to other small molecular semiconductor-curable polymer gate dielectric systems for high-performance organic electronic applications.
机译：在这里，通过简单的旋涂形成的高度结晶且自组装的6,13-​​双（三异丙基甲硅烷基乙炔基）并五苯（TIPS-并五苯）薄膜用于制造高性能溶液处理的有机场效应晶体管（OFET）被报道。 TIPS-并五苯有机半导体不是在部分交联的聚-4-乙烯基苯酚：聚（三聚氰胺-甲醛）（PVP）上单独自组装，而不是将半导电有机小分子绝缘聚合物共混物用于有机晶体管的有源层。 ：PMF）栅极电介质，从而导致垂直分离的半导体电介质膜具有TIPS-Pentacene的毫米大小的球晶-晶体形态。 TIPS-并五苯/ PVP：PMF膜的结构和电学性质已通过使用偏振光学显微镜，原子力显微镜，二维掠入射宽角X射线散射和二次离子质谱技术进行了研究。最后证明了一种高性能的OFET，其最大空穴迁移率为3.40 cm（2）V-1 s（-1），据我们所知，这是制造的TIPS-并五苯OFET的最高迁移率值之一使用常规的解决方法。预期这种新的沉积方法将适用于高性能有机电子应用的其他小分子半导体可固化聚合物栅极电介质系统。

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  • 来源
    《Advanced Functional Materials》 |2015年第24期|3658-3665|共8页
  • 作者

    Yoo Hocheon; Choi Hyun Ho; Shin Tae Joo; Rim Taiuk; Cho Kilwon; Jung Sungjune; Kim Jae-Joon;

  • 作者单位

    Pohang Univ Sci & Technol POSTECH, Dept Creat IT Engn, Pohang 790784, South Korea;

    Pohang Univ Sci & Technol POSTECH, Dept Chem Engn, Pohang 790784, South Korea|Pohang Univ Sci & Technol POSTECH, CASE, Pohang 790784, South Korea;

    UNIST, UNIST Cent Res Facil, Ulsan 689798, South Korea|UNIST, Sch Nat Sci, Ulsan 689798, South Korea;

    Pohang Univ Sci & Technol POSTECH, Dept Creat IT Engn, Pohang 790784, South Korea;

    Pohang Univ Sci & Technol POSTECH, Dept Chem Engn, Pohang 790784, South Korea|Pohang Univ Sci & Technol POSTECH, CASE, Pohang 790784, South Korea;

    Pohang Univ Sci & Technol POSTECH, Dept Creat IT Engn, Pohang 790784, South Korea;

    Pohang Univ Sci & Technol POSTECH, Dept Creat IT Engn, Pohang 790784, South Korea;

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