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Enhanced Charge Injection Through Nanostructured Electrodes for Organic Field Effect Transistors

机译：通过用于有机场效应晶体管的纳米结构电极的增强电荷注入

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摘要

Nanosphere lithography is used to process nanopore-structured electrodes, which are applied into the fabrication of bottom-gate, bottom-contact configuration organic field effect transistors (OFETs) to serve as source/drain elecrodes. The introduction of this nanopore-structure electrode facilitates the forming of nanopore-structure pentacene layers with small grain boundaries at the electrode interface, and then reduces the contact resistance, contact-induces the growth of pentacene and accordingly improves the mobility of charge carriers in the OFETs about 20 times as compared with results in literature through enhancing the charge carrier injection. It is believed that this structure of electrode is a valuable approach for improving organic filed effect transistors.
机译：纳米球光刻技术用于处理纳米孔结构的电极，该电极被应用于底栅，底接触配置的有机场效应晶体管（OFET）的制造中，用作源极/漏极电极。该纳米孔结构电极的引入促进了在电极界面处形成具有小晶界的纳米孔结构并五苯层，然后降低了接触电阻，接触诱导并五苯的生长并因此提高了电荷载流子在电极中的迁移率。通过增强电荷载流子注入，OFETs是文献中结果的约20倍。相信电极的这种结构是用于改善有机场效应晶体管的有价值的方法。

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