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首页> 外文期刊>Advanced Functional Materials >Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices
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Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices

机译：基于蛋白质的设备的内存和阈值特性之间的可配置电阻切换

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摘要

The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials.
机译：天然生物材料作为电子设备的基本组成部分对于生物相容性和绿色电子学的兴趣日益增长。在此，展示了具有可配置功能的基于天然丝蛋白的电阻开关（RS）设备。通过在设置过程中控制顺从电流，可以有效而精确地控制设备的RS类型。存储器RS可以由较高的顺应性电流触发，而阈值RS可以由较低的顺应性电流触发。此外，利用RS效应可以实现两种类型的以随机存取和WORM模式工作的存储设备。结果表明丝蛋白具有可持续电子和数据存储的潜力。此外，该发现将为基于生物材料的存储设备的性能优化以及研究由生物材料引起的RS效应背后的潜在机制提供重要指导。

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  • 来源
    《Advanced Functional Materials》 |2015年第25期|3825-3831|共7页
  • 作者

    Wang Hong; Du Yuanmin; Li Yingtao; Zhu Bowen; Leow Wan Ru; Li Yuangang; Pan Jisheng; Wu Tao; Chen Xiaodong;

  • 作者单位

    Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore|Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap, Semicond Technol, Xian 710071, Peoples R China;

    King Abdullah Univ Sci & Technol, Solar & Photovolta Engn Res Ctr, Thuwal 239556900, Saudi Arabia;

    Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore;

    Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore;

    Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore;

    Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China;

    Inst Mat Res & Engn, Mat Ctr Innovat, Singapore 117602, Singapore;

    King Abdullah Univ Sci & Technol, Solar & Photovolta Engn Res Ctr, Thuwal 239556900, Saudi Arabia;

    Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    electronic devices; memory; proteins; resistive switching; threshold;

    机译：电子设备;内存;蛋白质;电阻开关;阈值;

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