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Temperature Dependence of the Piezophototronic Effect in CdS Nanowires

机译：CdS纳米线中压电效应的温度依赖性

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摘要

The piezophototronic effect is known as a three-way coupling between piezoelectric polarization, semiconductor property, and optical excitation in piezoelectric semiconductor materials to modify their energy band structures by strain-induced piezoelectric polarization charges, and thus to tune/control their optoelectronic processes of charge carrier generation, separation, recombination, and transport. In this work, the temperature dependence of the piezophototronic effect in wurtzite-structured CdS nanowires is investigated from 77 to 300 K. The piezophototronic effect is enhanced by over 550% under lower temperature due to the increased effective piezoelectric polarization surface/interface charges resulting from the reduced screening effect by decreased mobile charge carriers in CdS nanowires. Optoelectronic performances of CdS nanowires are systematically investigated under various light illuminations, strains, and temperatures. By analyzing the corresponding band diagrams, the piezophototronic effect is found to dominate the transport and separation processes of charge carriers. This study presents in-depth fundamental understanding about the piezophototronic effect and provides guidance for its future applications in optoelectronic devices.
机译：压电效应是压电极化，半导体特性和压电半导体材料中的光激发之间的三向耦合，以通过应变感应的压电极化电荷来改变其能带结构，从而调节/控制其电荷的光电过程。载体的产生，分离，重组和运输。在这项工作中，研究了纤锌矿结构的CdS纳米线中压电效应的温度依赖性（从77到300 K）。由于较低的有效压电极化表面/界面电荷导致压电压电效应在较低的温度下提高了550％以上通过减少CdS纳米线中的移动电荷载流子来降低屏蔽效果。在各种光照，应变和温度下，系统研究了CdS纳米线的光电性能。通过分析相应的能带图，发现压电效应影响了电荷载流子的传输和分离过程。这项研究提供了对压电效应的深入基础知识，并为其在光电器件中的未来应用提供了指导。

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  • 来源
    《Advanced Functional Materials》 |2015年第33期|5277-5284|共8页
  • 作者

    Yu Ruomeng; Wang Xingfu; Wu Wenzhuo; Pan Caofeng; Bando Yoshio; Fukata Naoki; Hu Youfan; Peng Wenbo; Ding Yong; Wang Zhong Lin;

  • 作者单位

    Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA;

    Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA;

    Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA;

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China;

    Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan;

    Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan;

    Peking Univ, Dept Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China;

    Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA;

    Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA;

    Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA|Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    nanowires; piezophototronic effect; temperature dependence; optoelectronic devices;

    机译：纳米线;压电效应;温度依赖性;光电器件;

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