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首页> 外文期刊>Advanced Functional Materials >Genesis of 'Solitary Cations' Induced by Atomic Hydrogen
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Genesis of 'Solitary Cations' Induced by Atomic Hydrogen

机译：原子氢诱发“孤阳离子”的成因

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摘要

Substitution of constituent atoms and/or changes of crystal structure are routinely used to tailor the fundamental properties of a semiconductor. Here, it is shown that such a tailoring can also be realized thanks to a novel hydrogen effect. Four hydrogen atoms can screen the effect the crystal potential has on a constituent cation, thus generating a solitary cation: an effectively isolated impurity, so chemically different from the unscreened constituent cations that it strongly perturbs the electronic properties of the material by increasing its fundamental band-gap energy. Such a hydrogen-induced screening effect is removed by thermal treatments, thus permitting reversible modifications of both the crystal chemistry and material's properties. This phenomenon, observed in InN and other topical nitrides, should permit the development of a new class of materials as well as the fabrication of photonic devices and optical integrated circuits with distinct, tailor-made regions emitting or absorbing light, all integrated onto a monolithic semiconductor structure.
机译：通常使用组成原子的取代和/或晶体结构的改变来定制半导体的基本特性。在此示出，由于新颖的氢效应也可以实现这种剪裁。四个氢原子可以屏蔽晶体电势对组成阳离子的影响，从而生成一个孤立的阳离子：一种有效分离的杂质，化学性质与未屏蔽的组成阳离子不同，它会通过增加其基带来强烈干扰材料的电子性能间隙能量。通过热处理可以消除这种氢诱导的屏蔽效应，从而可以对晶体化学和材料特性进行可逆的修改。在InN和其他局部氮化物中观察到的这种现象，应允许开发新型材料，以及制造光子器件和光集成电路，这些光器件和光集成电路具有不同的，量身定制的区域来发射或吸收光，所有区域都集成到单片中半导体结构。

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