A Graphene-Based Vacuum Transistor with a High ON/OFF Current Ratio

Wu Gongtao; Wei Xianlong; Zhang Zhiyong; Chen Qing; Peng Lianmao

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A Graphene-Based Vacuum Transistor with a High ON/OFF Current Ratio

机译：具有高导通/截止电流比的基于石墨烯的真空晶体管

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摘要

A graphene-based vacuum transistor (GVT) with a high ON/OFF current ratio is proposed and experimentally realized by employing electrically biased graphene as the electron emitter. The states of a GVT are switched by tuning the bias voltage applied to the graphene emitter with an ON/OFF current ratio up to 10(6), a subthreshold slope of 120 mV dec(-1) and low working voltages of <10 V, exhibiting switching performances superior to those of previously reported graphene-based solid-state transistors. GVTs are fabricated and integrated using silicon microfabrication technology. A perfectly symmetric ambipolar device is achieved by integrating two GVTs, implying the potential of realizing vacuum integrated circuits based on GVTs. GVTs are expected to find applications in extreme environments such as high temperature and intense irradiation.

机译：提出了一种具有高导通/截止电流比的基于石墨烯的真空晶体管（GVT），并通过采用电偏置的石墨烯作为电子发射体来实验实现。通过调节开/关电流比高达10（6），亚阈值斜率120 mV dec（-1）和低工作电压<10 V的石墨烯发射器的偏置电压来切换GVT的状态，其开关性能优于先前报道的基于石墨烯的固态晶体管。 GVT使用硅微制造技术进行制造和集成。通过集成两个GVT实现了完美对称的双极性器件，这意味着有可能实现基于GVT的真空集成电路。 GVT有望在高温和强辐射等极端环境中找到应用。

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来源
《Advanced Functional Materials》 |2015年第37期|5972-5978|共7页
作者
Wu Gongtao; Wei Xianlong; Zhang Zhiyong; Chen Qing; Peng Lianmao;
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Peking Univ, Dept Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China.;

Peking Univ, Dept Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China.;

Peking Univ, Dept Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China.;

Peking Univ, Dept Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China.;

Peking Univ, Dept Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China.;

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A Graphene-Based Vacuum Transistor with a High ON/OFF Current Ratio

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