Physics of the Switching Kinetics in Resistive Memories

Menzel Stephan; Boettger Ulrich; Wimmer Martin; Salinga Martin

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Physics of the Switching Kinetics in Resistive Memories

机译：电阻记忆转换动力学的物理学

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Memristive cells based on different physical effects, that is, phase change, valence change, and electrochemical processes, are discussed with respect to their potential to overcome the voltage-time dilemma that is crucial for an application in storage devices. Strongly non-linear switching kinetics are required, spanning more than 15 orders of magnitude in time. Temperature-driven and field-driven crystallization, threshold switching, ion migration, as well as redox reactions at interfaces are

机译：讨论了基于不同物理效应（即相变，化合价和电化学过程）的忆阻电池克服电压-时间难题的潜力，这对于在存储设备中的应用至关重要。强烈需要非线性开关动力学，时间跨度超过15个数量级。温度驱动和场驱动的结晶，阈值切换，离子迁移以及界面处的氧化还原反应

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来源
《Advanced Functional Materials》 |2015年第40期|6306-6325|共20页
作者
Menzel Stephan; Boettger Ulrich; Wimmer Martin; Salinga Martin;
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作者单位

Res Ctr Julich, Peter Grunberg Inst PGI 7, D-52425 Julich, Germany.;

Rhein Westfal TH Aachen, Inst Mat Elect Engn & Informat Technol 2, D-52056 Aachen, Germany.;

Rhein Westfal TH Aachen, Phys Inst 1A 1, D-52056 Aachen, Germany.;

Rhein Westfal TH Aachen, Phys Inst 1A 1, D-52056 Aachen, Germany.;

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原文格式 PDF
正文语种 eng
中图分类
关键词
switching kinetics; memory; memristors;

机译：开关动力学;记忆;忆阻器;

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1. Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications [J] . Ielmini D., Milo V. Journal of Computational Electronics . 2017,第4期

机译：用于存储器和内存计算应用的电阻式开关设备的基于物理的建模方法
2. A Physics-Based Analytic Model of Analog Switching Resistive Random Access Memory [J] . Cai Linlin, Chen Wangyong, Zhao Yudi, IEEE Electron Device Letters . 2020,第2期

机译：基于物理基于模拟开关电阻随机存取存储器的分析模型
3. Physics of the Voltage Constant in Multilevel Switching of Conductive Bridge Resistive Memory [J] . Tong Liu, Yuhong Kang, Sarah El-Helw, Japanese journal of applied physics . 2013,第8Issue1期

机译：导电桥电阻存储器多级开关中电压常数的物理性质
4. Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing [C] . W. Wang, A. Bricalli, M. Laudato, IEEE International Electron Devices Meeting . 2018

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5. Control over variability in nonvolatile hafnium-oxide resistive-switching memory based on modeling of the switching processes [D] . Butcher, Brian Jerad. 2013

机译：基于开关过程的建模控制非易失性铪 - 氧化物电阻开关存储器的变异性
6. Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory [O] . Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, 2017

机译：基于SiN的电阻切换存储器中的自相容双极电阻切换
7. Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications [O] . D. Ielmini, V. Milo 2017

机译：基于物理的存储器和内存计算应用的电阻交换装置的建模方法

Physics of the Switching Kinetics in Resistive Memories

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