Low-Temperature Transport in Crystalline Ge1Sb2Te4

Volker Hanno; Jost Peter; Wuttig Matthias

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Low-Temperature Transport in Crystalline Ge1Sb2Te4

机译：Ge1Sb2Te4晶体中的低温输运

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Disorder and its reduction upon annealing play a crucial role in understanding the electrical transport in the crystalline phase-change material Ge1Sb2Te4. Previous studies focus either on the impact of disorder at moderate temperatures or on the low-temperature properties of crystalline films with a low degree of disorder. The present investigation describes and discusses the impact of pronounced disorder on charge transport at low temperatures. The present data reveal the existence of a metal-

机译：无序及其在退火时的还原在理解晶体相变材料Ge1Sb2Te4中的电输运方面起着至关重要的作用。先前的研究要么集中于在中等温度下无序的影响，要么集中于具有低无序度的结晶膜的低温特性。本研究描述和讨论了明显的无序性对低温下电荷传输的影响。当前数据表明存在金属

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来源
《Advanced Functional Materials》 |2015年第40期|6390-6398|共9页
作者
Volker Hanno; Jost Peter; Wuttig Matthias;
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作者单位

Rhein Westfal TH Aachen, Inst Phys IA, D-52056 Aachen, Germany.;

Rhein Westfal TH Aachen, Inst Phys IA, D-52056 Aachen, Germany.;

Julich Aachen Res Alliance, Sect Fundamentals Future Informat Technol JARA FI, D-52056 Aachen, Germany.;

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正文语种 eng
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关键词
disorder; hopping conduction; localization; metal-insulator transition; phase-change materials;

机译：无序;跳变传导;局部化;金属-绝缘体跃迁;相变材料;

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7. Low-Temperature Transport in Crystalline Ge1Sb2Te4 [O] . Volker, Hanno, Jost, Peter Christian Georg, Wuttig, Matthias 2015

机译：Ge1Sb2Te4晶体中的低温输运

Low-Temperature Transport in Crystalline Ge1Sb2Te4

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