Disorder-Induced Localization in Crystalline Pseudo-Binary GeTe-Sb2Te3n   Alloys between Ge3Sb2Te6 and GeTe

Jost Peter; Volker Hanno; Poitz Annika; Poltorak Christian; Zalden Peter; Schaefer Tobias; Lange Felix R. L.; Schmidt Ruediger M.; Hollaender Bernd; Wirtssohn Matti R.; Wuttig Matthias

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Disorder-Induced Localization in Crystalline Pseudo-Binary GeTe-Sb2Te3n Alloys between Ge3Sb2Te6 and GeTe

机译：Ge3Sb2Te6和GeTe之间的晶体伪二元GeTe-Sb2Te3n合金的无序诱导局部化

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摘要

Disorder has a tremendous impact on charge transport in crystalline compounds on the pseudo-binary line between Sb2Te3 and GeTe. Directly after crystallization, the pronounced disorder on the cation sublattice renders crystalline Ge(1)Sb(2)Te(4)a composition with a carrier density of the order of 10(20) cm(-3)an Anderson insulator. Annealing, however, induces the reduction of disorder and eventually triggers an insulator-to-metal transition. This study presents data on the electrical properties,

机译：无序对Sb2Te3和GeTe之间的伪二元线上的晶体化合物中的电荷传输具有巨大影响。刚结晶后，阳离子亚晶格上的明显紊乱使晶体Ge（1）Sb（2）Te（4）a的载流子密度约为10（20）cm（-3），成为安德森绝缘子。但是，退火可以减少无序状态，并最终触发绝缘体到金属的过渡。这项研究提供了有关电性能的数据，

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来源
《Advanced Functional Materials》 |2015年第40期|6399-6406|共8页
作者
Jost Peter; Volker Hanno; Poitz Annika; Poltorak Christian; Zalden Peter; Schaefer Tobias; Lange Felix R. L.; Schmidt Ruediger M.; Hollaender Bernd; Wirtssohn Matti R.; Wuttig Matthias;
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作者单位

Rhein Westfal TH Aachen, Inst Phys IA 1, D-52074 Aachen, Germany.;

Rhein Westfal TH Aachen, Inst Phys IA 1, D-52074 Aachen, Germany.;

Rhein Westfal TH Aachen, Inst Phys IA 1, D-52074 Aachen, Germany.;

Rhein Westfal TH Aachen, Inst Phys IA 1, D-52074 Aachen, Germany.;

Rhein Westfal TH Aachen, Inst Phys IA 1, D-52074 Aachen, Germany.;

Rhein Westfal TH Aachen, Inst Phys IA 1, D-52074 Aachen, Germany.;

Rhein Westfal TH Aachen, Inst Phys IA 1, D-52074 Aachen, Germany.;

Rhein Westfal TH Aachen, Inst Phys IA 1, D-52074 Aachen, Germany.;

JARA Fundamentals Future Informat Technol, Aachen, Germany.;

Rhein Westfal TH Aachen, Inst Phys IA 1, D-52074 Aachen, Germany.;

JARA Fundamentals Future Informat Technol, Aachen, Germany.;

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正文语种 eng
中图分类
关键词
disorder; electrical properties; localization; metal-insulator transition; phase-change materials;

机译：无序;电特性;局部化;金属-绝缘体转变;相变材料;

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专利

1. Disorder-induced anomalously signed Hall effect in crystalline GeTe/Sb_2Te_3 superlattice-like materials [J] . H. Tong, N. N. Yu, Z. Yang, Journal of Applied Physics . 2015,第7期

机译：类晶体GeTe / Sb_2Te_3超晶格材料中的无序诱发的异常签署霍尔效应
2. Disorder-induced localization in crystalline phase-change materials [J] . T. Siegrist, P. Jost, H. Volker, Nature Materials . 2011,第3期

机译：晶体相变材料中无序诱导的局域化
3. Controlling Localized Surface Plasmon Resonances in GeTe Nanoparticles Using an Amorphous-to-Crystalline Phase Transition [J] . Mark J. Polking, Prashant K. Jain, Yehonadav Bekenstein, Physical review letters . 2013,第3期

机译：使用非晶态至晶体相变控制GeTe纳米粒子中的局部表面等离子体共振。
4. Magneto-crystalline anisotropy in highly chemically ordered pseudo-binary (Fe{sub}(1-x)Mn{sub}x){sub}50Pt{sub}50 L1{sub}0 alloys [C] . G. Meyer, J. Thiele Intermag Conference . 2006

机译：高化学排序的磁晶各向异性伪二进制（Fe {sub}（1-x）mn {sub} x）{sub} 50pt {sub} 50 l1 {sub} 0合金
5. Disorder-induced localization and itinerant magnetism in the Half-Heusler alloys and dilution studies of the beta-titanium tin and barium boride compounds. [D] . Drymiotis, Fivos. 2002

机译：Half-Heusler合金中的无序诱导的局部化和流动磁性以及对β-钛锡和硼化钡化合物的稀释研究。
6. Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb2Te3 Alloys [O] . V. Bragaglia, K. Holldack, J. E. Boschker, -1

机译：非晶和晶体外延GeTe-Sb2Te3合金中声子模的远红外和拉曼光谱研究
7. Disorder-Induced Localization in Crystalline Pseudo-Binary GeTe–Sb2Te3 Alloys between Ge3Sb2Te6 and GeTe [O] . Jost, Peter Christian Georg, Volker, Hanno, Wuttig, Matthias, 2015

机译：Ge3Sb2Te6和GeTe之间的晶体伪二元GeTe–Sb2Te3合金的无序诱导局域化

Disorder-Induced Localization in Crystalline Pseudo-Binary GeTe-Sb2Te3n Alloys between Ge3Sb2Te6 and GeTe

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