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Formation and Movement of Cationic Defects During Forming and Resistiven Switching in SrTiO3 Thin Film Devices

机译:SrTiO3薄膜器件形成和电阻转换过程中阳离子缺陷的形成和运动

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摘要

The resistance switching phenomenon in many transition metal oxides is described by ion motion leading to the formation of oxygen-deficient, highly electron-doped filaments. In this paper, the interface and subinterface region of electroformed and switched metal-insulator-metal structures fabricated from a thin Fe-doped SrTiO3 (STO) film on n-conducting Nb-doped SrTiO3 crystals are investigated by photoemission electron microscopy, transmission electron microscopy, and hard X-ray photoelectron s
机译:许多过渡金属氧化物的电阻转换现象通过离子运动来描述,导致形成缺氧的高电子掺杂灯丝。本文通过光发射电子显微镜,透射电子显微镜研究了在n掺杂Nb掺杂SrTiO3晶体上由掺Fe的SrTiO3(STO)薄膜制成的电铸和开关金属-绝缘体-金属结构的界面和子界面区域。和硬X射线光电子

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