• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >Study of the Hole Transport Processes in Solution-Processed Layers of the Wide Bandgap Semiconductor Copper(I) Thiocyanate (CuSCN)
【24h】

Study of the Hole Transport Processes in Solution-Processed Layers of the Wide Bandgap Semiconductor Copper(I) Thiocyanate (CuSCN)

机译：宽带隙半导体硫氰酸铜（I）溶液加工层中空穴传输过程的研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Wide bandgap hole-transporting semiconductor copper(I) thiocyanate (CuSCN) has recently shown promise both as a transparent p-type channel material for thin-film transistors and as a hole-transporting layer in organic light-emitting diodes and organic photovoltaics. Herein, the hole-transport properties of solution-processed CuSCN layers are investigated. Metal-insulator-semiconductor capacitors are employed to determine key material parameters including: dielectric constant [5.1 (+/- 1.0)], flat-band voltage [-0.7 (+/- 0.1) V], and unintentional hole doping concentration [7.2 (+/- 1.4) x 10(17) cm(-3)]. The density of localized hole states in the mobility gap is analyzed using electrical field-effect measurements; the distribution can be approximated invoking an exponential function with a characteristic energy of 42.4 (+/- 0.1) meV. Further investigation using temperature-dependent mobility measurements in the range 78-318 K reveals the existence of three transport regimes. The first two regimes observed at high (303-228 K) and intermediate (228-123 K) temperatures are described with multiple trapping and release and variable range hopping processes, respectively. The third regime observed at low temperatures (123-78 K) exhibits weak temperature dependence and is attributed to a field-assisted hopping process. The transitions between the mechanisms are discussed based on the temperature dependence of the transport energy.
机译：宽带隙空穴传输半导体硫氰酸铜（I）（CuSCN）最近已显示出作为薄膜晶体管的透明p型沟道材料以及有机发光二极管和有机光伏电池中的空穴传输层的希望。在此，研究了固溶处理的CuSCN层的空穴传输性质。使用金属绝缘体-半导体电容器来确定关键的材料参数，包括：介电常数[5.1（+/- 1.0）]，平带电压[-0.7（+/- 0.1）V]和无意的空穴掺杂浓度[7.2] （+/- 1.4）x 10（17）cm（-3）]。使用电场效应测量来分析迁移率间隙中局部空穴状态的密度。该分布可以近似调用具有42.4（+/- 0.1）meV的特征能量的指数函数。使用温度依赖性迁移率测量值在78-318 K范围内进行的进一步研究表明，存在三种传输方式。描述了在高温（303-228 K）和中间温度（228-123 K）下观察到的前两种情况，分别描述了多重捕获和释放以及可变范围跳跃过程。在低温（123-78 K）下观察到的第三种状态表现出较弱的温度依赖性，并归因于现场辅助的跳跃过程。基于运输能量的温度依赖性讨论了机制之间的过渡。

著录项

  • 来源
    《Advanced Functional Materials》 |2015年第43期|6802-6813|共12页
  • 作者

    Pattanasattayavong Pichaya; Mottram Alexander D.; Yan Feng; Anthopoulos Thomas D.;

  • 作者单位

    Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Ctr Plast Elect, London SW7 2AZ, England|Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Dept Phys, London SW7 2AZ, England|Vidyasirimedhi Inst Sci & Technol, Sch Mol Sci & Engn, Dept Mat Sci & Engn, Wangchan 21210, Rayong, Thailand;

    Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Ctr Plast Elect, London SW7 2AZ, England|Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Dept Phys, London SW7 2AZ, England;

    Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China|Hong Kong Polytech Univ, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China;

    Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Ctr Plast Elect, London SW7 2AZ, England|Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Dept Phys, London SW7 2AZ, England;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号