Maximizing Transfection Efficiency of Vertically Aligned Silicon Nanowire Arrays

Elnathan Roey; Delalat Bahman; Brodoceanu Daniel; Alhmoud Hashim; Harding Frances J.; Buehler Katrin; Nelson Adrienne; Isa Lucio; Kraus Tobias; Voelcker Nicolas H.

首页> 外文期刊>Advanced Functional Materials >Maximizing Transfection Efficiency of Vertically Aligned Silicon Nanowire Arrays

【24h】

Maximizing Transfection Efficiency of Vertically Aligned Silicon Nanowire Arrays

机译：最大化垂直排列的硅纳米线阵列的转染效率

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Vertically aligned silicon nanowire (VA-SiNW) arrays are emerging as a powerful new tool for gene delivery by means of mechanical transfection. In order to utilize this tool efficiently, uncertainties around the required design parameters need to be removed. Here, a combination of nanosphere lithography and templated metal-assisted wet chemical etching is used to fabricate VA-SiNW arrays with a range of diameters, heights, and densities. This fabrication strategy allows identification of critical parameters of surface topography and consequently the design of SiNW arrays that deliver plasmid with high transfection efficiency into a diverse range of human cells whilst maintaining high cell viability. These results illuminate the cell-materials interactions that mediate VA-SiNW transfection and have the potential to transform gene therapy and underpin future treatment modalities.

机译：垂直排列的硅纳米线（VA-SiNW）阵列正在成为通过机械转染的强大基因传递新工具。为了有效地利用此工具，需要消除围绕所需设计参数的不确定性。在这里，结合使用纳米球光刻和模板化金属辅助湿法化学蚀刻来制造具有一定直径，高度和密度的VA-SiNW阵列。这种制造策略可以识别表面形貌的关键参数，因此可以设计出SiNW阵列，该阵列可将具有高转染效率的质粒递送到多种人类细胞中，同时保持高细胞活力。这些结果阐明了介导VA-SiNW转染的细胞-材料相互作用，并具有转化基因疗法和巩固未来治疗方式的潜力。

著录项

来源
《Advanced Functional Materials》 |2015年第46期|7215-7225|共11页
作者
Elnathan Roey; Delalat Bahman; Brodoceanu Daniel; Alhmoud Hashim; Harding Frances J.; Buehler Katrin; Nelson Adrienne; Isa Lucio; Kraus Tobias; Voelcker Nicolas H.;
展开▼
作者单位

Univ S Australia, Mawson Inst, ARC Ctr Excellence Convergent Bionano Sci & Techn, Mawson Lakes 5095, Australia;

Univ S Australia, Mawson Inst, ARC Ctr Excellence Convergent Bionano Sci & Techn, Mawson Lakes 5095, Australia;

INM Leibniz Inst New Mat, D-66123 Saarbrucken, Germany;

Univ S Australia, Mawson Inst, ARC Ctr Excellence Convergent Bionano Sci & Techn, Mawson Lakes 5095, Australia;

Univ S Australia, Mawson Inst, ARC Ctr Excellence Convergent Bionano Sci & Techn, Mawson Lakes 5095, Australia;

Univ S Australia, Mawson Inst, ARC Ctr Excellence Convergent Bionano Sci & Techn, Mawson Lakes 5095, Australia;

ETH, Dept Mat, Lab Interfaces Soft Matter & Assembly, CH-8093 Zurich, Switzerland;

ETH, Dept Mat, Lab Interfaces Soft Matter & Assembly, CH-8093 Zurich, Switzerland;

INM Leibniz Inst New Mat, D-66123 Saarbrucken, Germany;

Univ S Australia, Mawson Inst, ARC Ctr Excellence Convergent Bionano Sci & Techn, Mawson Lakes 5095, Australia;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Maximizing the ultimate absorption efficiency of vertically-aligned semiconductor nanowire arrays with wires of a low absorption cross-section [J] . Shalev Gil, Schmitt Sebastian W., Broenstrup Gerald, Nano Energy . 2015,第Null期

机译：使用低吸收截面的导线最大化垂直排列的半导体纳米线阵列的最终吸收效率
2. Transfer of vertically aligned silicon nanowires array using sacrificial porous silicon layer [J] . Thin Solid Films . 2020,第Mara31期

机译：使用牺牲多孔硅层转移垂直排列的硅纳米线阵列
3. Nanofabrication of arrays of silicon field emitters with vertical silicon nanowire current limiters and self-aligned gates [J] . Guerrera S. A., Akinwande A. I. Nanotechnology . 2016,第29期

机译：具有垂直硅纳米线限流器和自对准栅极的硅场致发射器阵列的纳米加工
4. Fabrication of Vertically Aligned Silicon Nanowire Arrays and Investigation on the Formation of the Nickel Silicide Nanowires [C] . Cheng, S.L., Chung, Electron Devices and Solid- State Circuits, 2007 IEEE Conference on . 2007

机译：垂直排列的硅纳米线阵列的制备和硅化镍纳米线形成的研究
5. Synthesis and characterization of vertically aligned nanowire array as high performance electrocatalysts for alcohol oxidation reactions. [D] . Liu, Chuqing. 2017

机译：垂直排列的纳米线阵列的合成和表征，作为用于醇氧化反应的高性能电催化剂。
6. Design parameters for enhanced photon absorption in vertically aligned silicon nanowire arrays [O] . Stefan T Jäger, Steffen Strehle 2014

机译：垂直排列的硅纳米线阵列中增强光子吸收的设计参数
7. Design parameters for enhanced photon absorption in vertically aligned silicon nanowire arrays [O] . 2014

机译：垂直排列的硅纳米线阵列中增强光子吸收的设计参数

Maximizing Transfection Efficiency of Vertically Aligned Silicon Nanowire Arrays

摘要

著录项

相似文献

相关主题

期刊订阅