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Hybrid Nanodielectrics for Low-Voltage Organic Electronics

机译：用于低压有机电子的混合纳米电介质

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摘要

Nanoscale hybrid dielectrics composed of an ultra-thin polymeric Iow-k bottom layer and an ultra-thin high-K oxide top layer, with high dielectric strength and capacitances up to 0.25 μFcm~(-2), compatible with low-voltage, low-power, organic electronic circuits are demonstrated. An efficient and reliable fabrication process, with 100% yield achieved on lab-scale arrays, is demonstrated by means of pulsed laser deposition (PLD) for the fast growth of the oxide layer. With this strategy, high capacitance top gate (TG), n-type and p-type organic field effect transistors (OFETs) with high mobility, low leakage currents, and low subthreshold slopes are realized and employed in complementary-like inverters, exhibiting ideal switching for supply voltages as low as 2 V. Importantly, the hybrid double-layer allows for a neat decoupling between the need for a high capacitance, guaranteed by the nanoscale thickness of the double layer, and for an optimized semiconductor-dielectric interface, a crucial point in enabling high mobility OFETs, thanks to the Iow-κ polymeric dielectric layer in direct contact with the polymer semiconductor. It is shown that such decoupling can be achieved already with a polymer dielectric as thin as 10 nm when the top oxide is deposited by PLD. This paves the way for a very versatile implementation of the proposed approach for the scaling of the operating voltages of TC OFETs with very low level of dielectric leakage currents to the fabrication of low-voltage organic electronics with drastically reduced power consumption.
机译：由超薄聚合物低介电常数k底层和超薄高介电常数氧化物顶层组成的纳米级混合电介质，具有高介电强度和高达0.25μFcm〜（-2）的电容，可与低电压，低电压兼容演示了电源，有机电子电路。通过用于激光层快速生长的脉冲激光沉积（PLD），证明了一种高效且可靠的制造工艺，并在实验室规模的阵列上实现了100％的成品率。通过这种策略，实现了具有高迁移率，低漏电流和低亚阈值斜率的高电容顶栅（TG），n型和p型有机场效应晶体管（OFET），并将其用于类似互补的逆变器中，表现出理想的对于低至2 V的电源电压进行开关。重要的是，混合双层允许在由双层纳米级厚度保证的高电容需求与优化的半导体-电介质界面之间实现纯净的去耦。 Iow-κ聚合物介电层与聚合物半导体直接接触，这是实现高迁移率OFET的关键点。已表明，当通过PLD沉积顶部氧化物时，可以使用厚度仅为10 nm的聚合物电介质来实现这种去耦。这为提出的方法的非常通用的实施铺平了道路，该方法用于以极低的介电泄漏电流来缩放TC OFET的工作电压，从而用于制造功耗大大降低的低压有机电子产品。

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  • 来源
    《Advanced Functional Materials》 |2014年第12期|1790-1798|共9页
  • 作者

    Alessandro Luzio; Francisco Garcia Ferre; Fabio Di Fonzo; Mario Caironi;

  • 作者单位

    Center for Nano Science and Technology @PoliMi Istituto Italiano di Tecnologia Via Pascoli 70/3, 20133, Milano, Italy;

    Center for Nano Science and Technology @PoliMi Istituto Italiano di Tecnologia Via Pascoli 70/3, 20133, Milano, Italy,Dipartimento di Energia Politecnico di Milano Via Ponzio 34/3, 20133, Milano, Italy;

    Center for Nano Science and Technology @PoliMi Istituto Italiano di Tecnologia Via Pascoli 70/3, 20133, Milano, Italy;

    Center for Nano Science and Technology @PoliMi Istituto Italiano di Tecnologia Via Pascoli 70/3, 20133, Milano, Italy;

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