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Effect of Non-Chlorinated Mixed Solvents on Charge Transport and Morphology of Solution-Processed Polymer Field-Effect Transistors

机译:非氯化混合溶剂对溶液处理的聚合物场效应晶体管的电荷输运和形貌的影响

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摘要

Using non-chlorinated solvents for polymer device fabrication is highly desirable to avoid the negative environmental and health effects of chlorinated solvents. Here, a non-chlorinated mixed solvent system, composed by a mixture of tetrahydronaphthalene and ρ-xylene, is described for processing a high mobility donor-acceptor fused thiophene-diketopyrrolopyrrole copolymer (PTDPPTFT4) in thin film transistors. The effects of the use of a mixed solvent system on the device performance, e.g., charge transport, morphology, and molecular packing, are investigated. ρ-Xylene is chosen to promote polymer aggregation in solution, while a higher boiling point solvent, tetrahydronaphthalene, is used to allow a longer evaporation time and better solubility, which further facilitates morphological tuning. By optimizing the ratio of the two solvents, the charge transport characteristics of the polymer semiconductor device are observed to significantly improve for polymer devices deposited by spin coating and solution shearing. Average charge carrier mobilities of 3.13 cm~2 V~(-1) s~(-1) and a maximum value as high as 3.94 cm~2 V~(-1) s~(-1) are obtained by solution shearing. The combination of non-chlorinated mixed solvents and the solution shearing film deposition provide a practical and environmentally-friendly approach to achieve high performance polymer transistor devices.
机译:为了避免氯化溶剂对环境和健康的负面影响,非常需要将非氯化溶剂用于聚合物器件的制造。在此,描述了一种由四氢萘和对二甲苯的混合物组成的非氯化混合溶剂系统,用于在薄膜晶体管中处理高迁移率供体-受体稠合的噻吩-二酮吡咯并吡咯共聚物(PTDPPTFT4)。研究了使用混合溶剂系统对器件性能(例如电荷传输,形态和分子堆积)的影响。选择对二甲苯以促进溶液中的聚合物聚集,同时使用较高沸点的溶剂四氢萘来延长蒸发时间并提高溶解度,从而进一步促进形态调节。通过优化两种溶剂的比例,观察到对于通过旋涂和溶液剪切沉积的聚合物器件,聚合物半导体器件的电荷传输特性显着改善。通过溶液剪切获得的平均电荷载流子迁移率为3.13 cm〜2 V〜(-1)s〜(-1),最大值高达3.94 cm〜2 V〜(-1)s〜(-1)。非氯化混合溶剂与溶液剪切膜沉积的结合为实现高性能聚合物晶体管器件提供了一种实用且环保的方法。

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  • 来源
    《Advanced Functional Materials》 |2014年第23期|3524-3534|共11页
  • 作者单位

    Department of Chemical Engineering Stanford University 381 North-South Mall, Stanford, CA 94305, USA;

    Department of Chemical Engineering Stanford University 381 North-South Mall, Stanford, CA 94305, USA;

    Department of Chemical Engineering Stanford University 381 North-South Mall, Stanford, CA 94305, USA;

    Stanford Synchrotron Radiation Laboratory 2575 Sand Hill Rd, Menlo Park, CA 94025, USA;

    Corning Incorporated SP-FR-06-1, Corning, NY 14831, USA;

    Corning Incorporated SP-FR-06-1, Corning, NY 14831, USA;

    Stanford Synchrotron Radiation Laboratory 2575 Sand Hill Rd, Menlo Park, CA 94025, USA;

    Department of Chemical Engineering National Taiwan University Taipei 106, Taiwan;

    Shanghai Jiao Tong University Comprehensive Laboratory Building Room 2-603, 800 DongChuan Rd., Shanghai 200240, China;

    Department of Chemical Engineering Stanford University 381 North-South Mall, Stanford, CA 94305, USA;

    Stanford Synchrotron Radiation Laboratory 2575 Sand Hill Rd, Menlo Park, CA 94025, USA;

    Corning Incorporated SP-FR-06-1, Corning, NY 14831, USA;

    Department of Chemical Engineering Stanford University 381 North-South Mall, Stanford, CA 94305, USA;

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