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首页> 外文期刊>Advanced Functional Materials >Improved Exciton Dissociation at Semiconducting Polymer:ZnO Donor:Acceptor Interfaces via Nitrogen Doping of ZnO
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Improved Exciton Dissociation at Semiconducting Polymer:ZnO Donor:Acceptor Interfaces via Nitrogen Doping of ZnO

机译：半导体中ZnO的氮掺杂改善了半导体：ZnO供体：受体界面的激子离解

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摘要

Exciton dissociation at the zinc oxide/poly(3-hexylthiophene) (ZnO/P3HT) interface as a function of nitrogen doping of the zinc oxide, which decreases the electron concentration from approximately 10~(19) cm~(-3) to 10~(17) cm~(-3), is reported. Exciton dissociation and device photocurrent are strongly improved with nitrogen doping. This improved dissociation of excitons in the conjugated polymer is found to result from enhanced light-induced de-trapping of electrons from the surface of the nitrogen-doped ZnO. The ability to improve the surface properties of ZnO by introducing a simple nitrogen dopant has general applicability.
机译：氧化锌/聚（3-己基噻吩）（ZnO / P3HT）界面上的激子解离与氧化锌的氮掺杂有关，使电子浓度从约10〜（19）cm〜（-3）降低至10报道了〜（17）cm〜（-3）。氮掺杂极大地改善了激子离解和器件光电流。发现在共轭聚合物中激子的这种改善的离解是由于增强的光诱导的电子从氮掺杂的ZnO表面的去俘获作用所致。通过引入简单的氮掺杂剂来改善ZnO的表面性能的能力具有普遍的适用性。

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  • 来源
    《Advanced Functional Materials》 |2014年第23期|3562-3570|共9页
  • 作者

    Kevin P. Mussel man; Sebastian Albert-Seifried; Robert L. Z. Hoye; Aditya Sadhanala; David Munoz-Rojas; Judith L. MacManus-Driscoll; Richard H. Friend;

  • 作者单位

    Department of Physics University of Cambridge Cavendish Laboratory JJ Thomson Ave Cambridge, CB3 0HE, UK;

    Department of Physics University of Cambridge Cavendish Laboratory JJ Thomson Ave Cambridge, CB3 0HE, UK;

    Department of Materials Science & Metallurgy University of Cambridge 27 Charles Babbage Road, Cambridge CB3 0FS, UK;

    Department of Physics University of Cambridge Cavendish Laboratory JJ Thomson Ave Cambridge, CB3 0HE, UK;

    Department of Materials Science & Metallurgy University of Cambridge 27 Charles Babbage Road, Cambridge CB3 0FS, UK,Institute de Ciencia de Materiales de Barcelona ICMAB-CSIC, Campus de la UAB Bellaterra 08193, Spain;

    Department of Materials Science & Metallurgy University of Cambridge 27 Charles Babbage Road, Cambridge CB3 0FS, UK;

    Department of Physics University of Cambridge Cavendish Laboratory JJ Thomson Ave Cambridge, CB3 0HE, UK;

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