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Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy

机译：通过无掩模选择区外延在纳米沟槽Si（100）上形成立方相GaN

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摘要

A method of forming cubic phase (zinc blende) GaN (referred as c-GaN) on a CMOS-compatible on-axis Si (100) substrate is reported. Conventional GaN materials are hexagonal phase (wurtzite) (referred as h-GaN) and possess very high polarization fields (～MV/cm) along the common growth direction of <0001>. Such large polarization fields lead to undesired shifts (e.g., wavelength and current) in the performance of photonic and vertical transport electronic devices. The cubic phase of GaN materials is polarization-free along the common growth direction of <001>, however, this phase is thermo-dynamically unstable, requiring low-temperature deposition conditions and unconventional substrates (e.g., GaAs). Here, novel nano-groove patterning and maskless selective area epitaxy processes are employed to integrate thermodynamically stable, stress-free, and low-defectivity c-GaN on CMOS-compatible on-axis Si. These results suggest that epitaxial growth conditions and nano-groove pattern parameters are critical to obtain such high quality c-GaN. InGaN/GaN multi-quantum-well structures grown on c-GaN/Si (100) show strong room temperature luminescence in the visible spectrum, promising visible emitter applications for this technology.
机译：报道了一种在兼容CMOS的轴向Si（100）衬底上形成立方相（锌共混物）GaN（称为c-GaN）的方法。常规的GaN材料是六方相（纤锌矿）（称为h-GaN），沿<0001>的共同生长方向具有很高的极化场（〜MV / cm）。如此大的偏振场导致光子和垂直传输电子设备的性能发生不希望的偏移（例如，波长和电流）。 GaN材料的立方相沿<001>的共同生长方向无极化，但是此相在热力学上不稳定，需要低温沉积条件和非常规的衬底（例如GaAs）。在这里，采用新颖的纳米沟槽图案化和无掩模选择性区域外延工艺，将热力学稳定，无应力且低缺陷率的c-GaN集成在CMOS兼容轴Si上。这些结果表明，外延生长条件和纳米沟槽图案参数对于获得这种高质量的c-GaN至关重要。在c-GaN / Si（100）上生长的InGaN / GaN多量子阱结构在可见光谱中显示出强大的室温发光性能，有望成为该技术的可见发射器应用。

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  • 来源
    《Advanced Functional Materials》 |2014年第28期|4492-4496|共5页
  • 作者

    Can Bayram; John A. Ott; Kuen-Ting Shiu; Cheng-Wei Cheng; Yu Zhu; Jeehwan Kim; Manijeh Razeghi; Devendra K. Sadana;

  • 作者单位

    IBM Research, Thomas J. Watson Research Center Yorktown Heights, NY 10598, USA;

    IBM Research, Thomas J. Watson Research Center Yorktown Heights, NY 10598, USA;

    IBM Research, Thomas J. Watson Research Center Yorktown Heights, NY 10598, USA;

    IBM Research, Thomas J. Watson Research Center Yorktown Heights, NY 10598, USA;

    IBM Research, Thomas J. Watson Research Center Yorktown Heights, NY 10598, USA;

    IBM Research, Thomas J. Watson Research Center Yorktown Heights, NY 10598, USA;

    Center for Quantum Devices Department of EECS Northwestern University IL 60208, USA;

    IBM Research, Thomas J. Watson Research Center Yorktown Heights, NY 10598, USA;

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