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Point Defect Engineering of High-Performance Bismuth-Telluride-Based Thermoelectric Materials

机译:高性能碲化铋铋热电材料的点缺陷工程

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摘要

Developing high-performance thermoelectric materials is one of the crucial aspects for direct thermal-to-electric energy conversion. Herein, atomic scale point defect engineering is introduced as a new strategy to simultaneously optimize the electrical properties and lattice thermal conductivity of thermoelectric materials, and (Bi,Sb)_2(Te,Se)_3 thermoelectric solid solutions are selected as a paradigm to demonstrate the applicability of this new approach. Intrinsic point defects play an important role in enhancing the thermoelectric properties. Antisite defects and donor-like effects are engineered in this system by tuning the formation energy of point defects and hot deformation. As a result, a record value of the figure of merit ZT of ≈1.2 at 445 K is obtained for n-type polycrystalline Bi_2Te_(2.3)Se_(0.7) alloys, and a high ZT value of ≈1.3 at 380 K is achieved for p-type polycrystalline Bi_(0.3)Sb_(1.7)Te_3 alloys, both values being higher than those of commercial zone-melted ingots. These results demonstrate the promise of point defect engineering as a new strategy to optimize thermoelectric properties.
机译:开发高性能热电材料是直接热电转换的关键方面之一。在本文中,引入原子尺度点缺陷工程作为同时优化热电材料的电性能和晶格热导率的新策略,并选择(Bi,Sb)_2(Te,Se)_3热电固溶体作为范例来说明这种新方法的适用性。本征点缺陷在增强热电性能中起重要作用。通过调整点缺陷和热变形的形成能,在该系统中设计了反位缺陷和类施主效应。结果,对于n型多晶Bi_2Te_(2.3)Se_(0.7)合金,在445 K时的品质因数ZT达到了创纪录的≈1.2的值,而对于380 K的Z型合金,ZT达到了约1.3的高ZT值。 p型多晶Bi_(0.3)Sb_(1.7)Te_3合金,均高于商业区熔铸锭的值。这些结果证明了点缺陷工程技术有望成为优化热电性能的新策略。

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  • 来源
    《Advanced Functional Materials》 |2014年第33期|5211-5218|共8页
  • 作者单位

    State Key Laboratory of Silicon Materials Department of Materials Science and Engineering Zhejiang University Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials Department of Materials Science and Engineering Zhejiang University Hangzhou 310027, China,Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province Zhejiang University Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials Department of Materials Science and Engineering Zhejiang University Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials Department of Materials Science and Engineering Zhejiang University Hangzhou 310027, China,Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province Zhejiang University Hangzhou 310027, China;

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