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Nanoshuttered OLEDs: Unveiled Invisible Auxiliary Electrode

机译：纳米快门OLED：裸露的隐形辅助电极

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摘要

In this study, organic light-emitting diodes (OLEDs) with enhanced optical properties are fabricated by inserting a nanosized stripe auxiliary electrode layer (nSAEL) between the substrate and an indium tin oxide (ITO) layer. This design can avoid the shortcomings of conventional microsized layers while maintaining high optical uniformity due to the improved conductivity of the electrode. The primary advantage is that the nSAEL (submicrometer scale) is no longer visible to the naked eye. Moreover, the reflective shuttered (grating) structure of the nSAEL increases the forward-directed light by the microcavity (MC) effect and minimizes the loss of light by the extracting the surface plasmon polariton (SPP) mode. In this study, the degree of the MC and SPP can be controlled with the parameters of the nSAEL by simply conjugating the conditions of laser interference lithography (LIL). Therefore, the current and power efficiencies of the device with an nSAEL with optimized parameters are 1.17 and 1.23 times higher than the reference device at 1000 cd/m~2, respectively, and at these parameters, the overall sheet resistance is reduced to less than half (48%). All of the processes are verified by comparing the computational simulation results and the experimental results obtained with the actual fabricated device.
机译：在这项研究中，通过在基板和铟锡氧化物（ITO）层之间插入纳米级条纹辅助电极层（nSAEL）来制造具有增强的光学性能的有机发光二极管（OLED）。由于电极的改进的导电性，这种设计可以避免传统的微尺寸层的缺点，同时保持高的光学均匀性。主要优点是肉眼不再可见nSAEL（亚微米级）。此外，nSAEL的反射式快门（光栅）结构通过微腔（MC）效应增加了前向光，并通过提取表面等离激元极化（SPP）模式使光的损失最小化。在这项研究中，可以通过简单地结合激光干涉光刻技术（LIL）的条件，通过nSAEL的参数来控制MC和SPP的程度。因此，具有优化参数的nSAEL的器件的电流效率和功率效率分别比参考器件在1000 cd / m〜2时的电流和功率效率高1.17倍和1.23倍，并且在这些参数下，总薄层电阻减小至小于一半（48％）。通过比较计算仿真结果和使用实际制造的设备获得的实验结果来验证所有过程。

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  • 来源
    《Advanced Functional Materials》 |2014年第41期|6414-6421|共8页
  • 作者

    Yong Sub Shim; Ju Hyun Hwang; Hyun Jun Lee; Kyung Bok Choi; Kyu Nyun Kim; Cheol Hwee Park; Sun-Gyu Jung; Young Wook Park; Byeong-Kwon Ju;

  • 作者单位

    Display and Nanosystem Laboratory College of Engineering Korea University Seoul 136-713, Republic of Korea;

    Display and Nanosystem Laboratory College of Engineering Korea University Seoul 136-713, Republic of Korea;

    Display and Nanosystem Laboratory College of Engineering Korea University Seoul 136-713, Republic of Korea;

    Display and Nanosystem Laboratory College of Engineering Korea University Seoul 136-713, Republic of Korea;

    Display and Nanosystem Laboratory College of Engineering Korea University Seoul 136-713, Republic of Korea;

    Display and Nanosystem Laboratory College of Engineering Korea University Seoul 136-713, Republic of Korea;

    Display and Nanosystem Laboratory College of Engineering Korea University Seoul 136-713, Republic of Korea;

    The institute of High Technology Materials and Devices Korea University Seoul 136-713, Republic of Korea;

    Display and Nanosystem Laboratory College of Engineering Korea University Seoul 136-713, Republic of Korea;

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