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首页> 外文期刊>Advanced Functional Materials >Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a-SrTiO_3) Memristors
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Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a-SrTiO_3) Memristors

机译：非晶钙钛矿氧化物（a-SrTiO_3）忆阻器中的纳米电阻转换。

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摘要

Memristive devices are the precursors to high density nanoscale memories and the building blocks for neuromorphic computing. In this work, a unique room temperature synthesized perovskite oxide (amorphous SrTiO_3: a-STO) thin film platform with engineered oxygen deficiencies is shown to realize high performance and scalable metal-oxide-metal (MIM) memristive arrays demonstrating excellent uniformity of the key resistive switching parameters. a-STO memristors exhibit nonvolatile bipolar resistive switching with significantly high (10~3-10~4) switching ratios, good endurance (＞10~6 Ⅰ-Ⅴ sweep cycles), and retention with less than 1% change in resistance over repeated 10~5 s long READ cycles. Nano-contact studies utilizing in situ electrical nanoindentation technique reveal nanoionics driven switching processes that rely on isolatedly controllable nano-switches uniformly distributed over the devjce area. Furthermore, in situ electrical nanoindentation studies on ultrathin a-STO/metal stacks highlight the impact of mechanical stress on the modulation of non-linear ionic transport mechanisms in perovskite oxides while confirming the ultimate scalability of these devices. These results high-light the promise of amorphous perovskite memristors for high performance CMOS/CMOL compatible memristive systems.
机译：忆阻器件是高密度纳米级存储器的先驱，也是神经形态计算的基础。在这项工作中，展示了具有工程氧缺陷的独特的室温合成钙钛矿氧化物（非晶态SrTiO_3：a-STO）薄膜平台，可实现高性能和可扩展的金属氧化物-金属（MIM）忆阻阵列，证明了键的出色均匀性电阻开关参数。 a-STO忆阻器具有非易失性双极电阻开关，具有很高的开关比（10〜3-10〜4），良好的耐久性（> 10〜6Ⅰ-Ⅴ扫描周期），并且在反复重复时电阻变化小于1％ 10〜5 s长的读取周期。利用原位电纳米压痕技术进行的纳米接触研究表明，纳米离子驱动的开关过程依赖于均匀分布在器件区域上的可独立控制的纳米开关。此外，对超薄a-STO /金属叠层的原位电纳米压痕研究突出了机械应力对钙钛矿氧化物中非线性离子传输机制的调制的影响，同时确认了这些设备的最终可扩展性。这些结果突显了非晶钙钛矿忆阻器用于高性能CMOS / CMOL兼容忆阻系统的希望。

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  • 来源
    《Advanced Functional Materials》 |2014年第43期|6741-6750|共10页
  • 作者

    Hussein Nili; Sumeet Walia; Sivacarendran Balendhran; Dmitri B. Strukov; Madhu Bhaskaran; Sharath Sriram;

  • 作者单位

    Functional Materials and Microsystems Research Group School of Electrical and Computer Engineering RMIT University Melbourne, Victoria, Australia;

    Functional Materials and Microsystems Research Group School of Electrical and Computer Engineering RMIT University Melbourne, Victoria, Australia;

    Functional Materials and Microsystems Research Group School of Electrical and Computer Engineering RMIT University Melbourne, Victoria, Australia;

    Electrical and Computer Engineering Department University of California Santa Barbara Santa Barbara, CA 93106, USA;

    Functional Materials and Microsystems Research Group School of Electrical and Computer Engineering RMIT University Melbourne, Victoria, Australia;

    Functional Materials and Microsystems Research Group School of Electrical and Computer Engineering RMIT University Melbourne, Victoria, Australia;

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