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Anti-Ferromagnet Controlled Tunneling Magnetoresistance

机译:反铁磁控制隧穿磁阻

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摘要

The requirement for high-density memory integration advances the development of newly structured spintronic devices, which have reduced stray fields and are insensitive to magnetic field perturbations. This could be visualized in magnetic tunnel junctions incorporating anti-ferromagnetic instead of ferromagnetic electrodes. Here, room-temperature anti-ferromangnet (AFM)-controlled tunneling anisotropic magnetoresistance in a novel perpendicular junction is reported, where the IrMn AFM stays immediately at both sides of AlO_x tunnel barrier as the functional layers. Bi-stable resistance states governed by the relative arrangement of uncompensated anti-ferromagnetic IrMn moments are obtained here, rather than the traditional spin-valve signal observed in ferromagnet-based tunnel junctions. The experimental observation of room-temperature tunneling magnetoresistance controlled directly by AFM is practically significant and may pave the way for new-generation memories based on AFM spintronics.
机译:对高密度存储器集成的需求推动了新型结构自旋电子器件的发展,该器件具有减小的杂散场并且对磁场扰动不敏感。这可以在结合反铁磁而不是铁磁电极的磁性隧道结中看到。在此,报道了在新型垂直结中由室温反铁磁网(AFM)控制的隧穿各向异性磁阻,其中IrMn AFM作为功能层直接停留在AlO_x隧道势垒的两侧。在这里获得了由未补偿反铁磁IrMn矩的相对排列控制的双稳态电阻状态,而不是在基于铁磁体的隧道结中观察到的传统自旋阀信号。由AFM直接控制的室温隧穿磁阻的实验观察具有实际意义,并且可能为基于AFM自旋电子学的新一代存储器铺平道路。

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  • 来源
    《Advanced Functional Materials》 |2014年第43期|6806-6810|共5页
  • 作者单位

    Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University Beijing 100084, China;

    Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University Beijing 100084, China;

    Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University Beijing 100084, China;

    Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University Beijing 100084, China;

    Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University Beijing 100084, China;

    Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University Beijing 100084, China;

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