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首页> 外文期刊>Advanced Functional Materials >Ultraviolet-Light-Induced Reversible and Stable Carrier Modulation in MoS_2 Field-Effect Transistors
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Ultraviolet-Light-Induced Reversible and Stable Carrier Modulation in MoS_2 Field-Effect Transistors

机译：MoS_2场效应晶体管中的紫外线诱导的可逆和稳定载流子调制。

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摘要

The tuning of charge carrier concentrations in semiconductor is necessary in order to approach high performance of the electronic and optoelectronic devices. It is demonstrated that the charge-carrier density of single-layer (SL), bilayer (BL), and few-layer (FL) MoS_2 nanosheets can be finely and reversibly tuned with N_2 and O_2 gas in the presence of deep-ultraviolet (DUV) light. After exposure to N_2 gas in the presence of DUV light, the threshold voltages of SL, BL, and FL MoS_2 field-effect transistors (FETs) shift towards negative gate voltages. The exposure to N_2 gas in the presence of DUV light notably improves the drain-to-source current, carrier density, and charge-carrier mobility for SL, BL, and FL MoS_2 FETs. Subsequently, the same devices are exposed to O_2 gas in the presence of DUV light for different periods and the electrical characteristics are completely recovered after a certain time. The doping by using the combination of N_2 and O_2 gas with DUV light provides a stable, effective, and facile approach for improving the performance of MoS_2 electronic devices.
机译：为了接近电子和光电设备的高性能，必须调整半导体中的载流子浓度。结果表明，在深紫外线存在下，单层（SL），双层（BL）和几层（FL）MoS_2纳米片的电荷载流子密度可以用N_2和O_2气体进行精细和可逆的调谐（ DUV）灯。在存在DUV光的情况下暴露于N_2气体之后，SL，BL和FL MoS_2场效应晶体管（FET）的阈值电压向负栅极电压偏移。在DUV光的存在下暴露于N_2气体可显着改善SL，BL和FL MoS_2 FET的漏源电流，载流子密度和电荷载流子迁移率。随后，将相同的设备在DUV光存在下暴露于O_2气体中不同的时间，并在一定时间后完全恢复电特性。通过将N_2和O_2气体与DUV光结合使用进行掺杂，可提供一种稳定，有效且简便的方法来改善MoS_2电子设备的性能。

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  • 来源
    《Advanced Functional Materials》 |2014年第45期|7125-7132|共8页
  • 作者

    Arun Kumar Singh; Shaista Andleeb; Jai Singh; Hoang Tien Dung; Yongho Seo; Jonghwa Eom;

  • 作者单位

    Department of Physics and Graphene Research Institute Sejong University Seoul 143-747, Korea;

    Department of Physics and Graphene Research Institute Sejong University Seoul 143-747, Korea;

    Faculty of Nanotechnology & Advanced Materials Engineering and Graphene Research Institute Sejong University Seoul 143-747, Korea;

    Faculty of Nanotechnology & Advanced Materials Engineering and Graphene Research Institute Sejong University Seoul 143-747, Korea;

    Faculty of Nanotechnology & Advanced Materials Engineering and Graphene Research Institute Sejong University Seoul 143-747, Korea;

    Department of Physics and Graphene Research Institute Sejong University Seoul 143-747, Korea;

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