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Vertically Segregated Structure and Properties of Small Molecule-Polymer Blend Semiconductors for Organic Thin-Film Transistors

机译:有机薄膜晶体管用小分子-聚合物共混半导体的垂直隔离结构和性能

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摘要

A comprehensive structure and performance study of thin blend films of the small-molecule semiconductor, 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT), with various insulating binder polymers in organic thin-film transistors is reported. The vertically segregated composition profile and nanostructure in the blend films are characterized by a combination of complementary experimental methods including grazing incidence X-ray diffraction, neutron reflectivity, variable angle spectroscopic ellipsometry, and near edge X-ray absorption fine structure spectroscopy. Three polymer binders are considered: atactic poly(α-methylstyrene), atactic poly(methylmethacrylate), and syndiotactic polystyrene. The choice of polymer can strongly affect the vertical composition profile and the extent of crystalline order in blend films due to the competing effects of confinement entropy, interaction energy with substrate surfaces, and solidification kinetics. The variations in the vertically segregated composition profile and crystalline order in thin blend films explain the significant impacts of binder polymer choice on the charge carrier mobility of these films in the solution-processed bottom-gate/bottom-contact thin-film transistors.
机译:对有机薄膜晶体管中的小分子半导体2,8-二氟-5,11-双(三乙基甲硅烷基乙炔基)蒽噻吩(diF-TESADT)与各种绝缘粘合剂聚合物的薄膜的综合结构和性能研究是报告。共混膜中垂直分离的组成轮廓和纳米结构的特征是通过互补实验方法的组合进行的,这些方法包括掠入射X射线衍射,中子反射率,可变角光谱椭圆偏光法和近边缘X射线吸收精细结构光谱。考虑了三种聚合物粘合剂:无规立构聚(α-甲基苯乙烯),无规立构聚(甲基丙烯酸甲酯)和间同立构聚苯乙烯。由于限制熵,与基材表面的相互作用能以及固化动力学的竞争效应,聚合物的选择会严重影响共混膜的垂直组成分布和结晶顺序的程度。薄共混薄膜中垂直分离的成分分布和结晶顺序的变化解释了在溶液加工的底栅/底接触薄膜晶体管中,粘合剂聚合物选择对这些薄膜的电荷载流子迁移率的重大影响。

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  • 来源
    《Advanced Functional Materials》 |2013年第3期|366-376|共11页
  • 作者单位

    Department of Chemistry Seoul National University Seoul, 151-747, Korea;

    Department of Chemistry Seoul National University Seoul, 151-747, Korea;

    National Institute of Standards and Technology Gaithersburg, MD 20899, USA;

    National Institute of Standards and Technology Gaithersburg, MD 20899, USA;

    National Institute of Standards and Technology Gaithersburg, MD 20899, USA;

    National Institute of Standards and Technology Gaithersburg, MD 20899, USA;

    National Institute of Standards and Technology Gaithersburg, MD 20899, USA;

    Stanford Synchrotron Radiation Laboratory Melon Park, CA 94025, USA;

    National Institute of Standards and Technology Gaithersburg, MD 20899, USA;

    National Institute of Standards and Technology Gaithersburg, MD 20899, USA;

    Department of Chemistry University of Kentucky Lexington, KY 40506, USA;

    Department of Chemistry University of Kentucky Lexington, KY 40506, USA;

    Department of Chemistry Seoul National University Seoul, 151-747, Korea;

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