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首页> 外文期刊>Advanced Functional Materials >Nanocasting of Mesoporous In-TM (TM = Co, Fe, Mn) Oxides: Towards 3D Diluted-Oxide Magnetic Semiconductor Architectures
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Nanocasting of Mesoporous In-TM (TM = Co, Fe, Mn) Oxides: Towards 3D Diluted-Oxide Magnetic Semiconductor Architectures

机译：介孔In-TM（TM = Co，Fe，Mn）氧化物的纳米铸造：迈向3D稀氧化物磁性半导体架构

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Transition metal (Co, Fe, Mn)-doped In_2O_(3-y) mesoporous oxides are synthesized by nanocasting using mesoporous silica as hard templates. 3D ordered mesoporous replicas are obtained after silica removal in the case of the In-Co and In-Fe oxide powders. During the conversion of metal nitrates into the target mixed oxides, Co, Fe, and Mn ions enter the lattice of the In_2O_3 bixbyite phase via isovalent or heterovalent cation substitution, leading to a reduction in the cell parameter. In turn, non-negligible amounts of oxygen vacancies are also present, as evidenced from Rietveld refinements of the X-ray diffraction patterns. In addition to (In_(1-x)TM_x)_2O_(3-y), minor amounts of Co_3O_4, α-Fe_2O_3, and Mn_xO_y phases are also detected, which originate from the remaining TM cations not forming part of the bixbyite lattice. The resulting TM-doped In_2O_(3-y) mesoporous materials show a ferromagnetic response at room temperature, superimposed on a paramagnetic background. Conversely, undoped In_2O_(3-y) exhibits a mixed diamagnetic-ferromagnetic behavior with much smaller magnetization. The influence of the oxygen vacancies and the doping elements on the magnetic properties of these materials is discussed. Due to their 3D mesostructural geometrical arrangement and their room-temperature ferromagnetic behavior, mesoporous oxide-diluted magnetic semiconductors may become smart materials for the implementation of advanced components in spintronic nanodevices.
机译：掺杂过渡金属（Co，Fe，Mn）的In_2O_（3-y）介孔氧化物是通过以介孔二氧化硅为硬模板进行纳米浇铸而合成的。对于In-Co和In-Fe氧化物粉末，在去除二氧化硅后可获得3D有序介孔复制品。在金属硝酸盐转化为目标混合氧化物的过程中，Co，Fe和Mn离子通过等价或杂价阳离子取代进入In_2O_3方铁矿相的晶格，导致电池参数降低。反过来，也存在不可忽略的氧空位，这是由X射线衍射图的Rietveld精炼所证明的。除了（In_（1-x）TM_x）_2O_（3-y）外，还检测到少量的Co_3O_4，α-Fe_2O_3和Mn_xO_y相，这些相源于未形成方铁矿晶格一部分的其余TM阳离子。所得的TM掺杂的In_2O_（3-y）介孔材料在室温下显示出铁磁响应，叠加在顺磁本底上。相反，未掺杂的In_2O_（3-y）表现出混合的反磁性-铁磁行为，且磁化强度小得多。讨论了氧空位和掺杂元素对这些材料的磁性的影响。由于它们的3D介观几何排列和它们的室温铁磁行为，中孔氧化物稀释的磁性半导体可能成为在自旋电子纳米器件中实现高级组件的智能材料。

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  • 来源
    《Advanced Functional Materials》 |2013年第7期|900-911|共12页
  • 作者

    Eva Pellicer; Moises Cabo; Emma Rossinyol; Pau Solsona; Santiago Suhnach; Maria Dolors Baro; Jordi Sort;

  • 作者单位

    Departament de Ffsica Facultat de Ciencies Universitat Autonoma de Barcelona E-08193 Bellaterra, Spain;

    Departament de Ffsica Facultat de Ciencies Universitat Autonoma de Barcelona E-08193 Bellaterra, Spain;

    Servei de Microscopia Facultat de Ciencies Universitat Autonoma de Barcelona E-08193 Bellaterra, Spain;

    Departament de Ffsica Facultat de Ciencies Universitat Autonoma de Barcelona E-08193 Bellaterra, Spain;

    Departament de Ffsica Facultat de Ciencies Universitat Autonoma de Barcelona E-08193 Bellaterra, Spain;

    Departament de Ffsica Facultat de Ciencies Universitat Autonoma de Barcelona E-08193 Bellaterra, Spain;

    Institucio Catalana de Recerca i Estudis Avancats (ICREA) Departament de Fisica Facultat de Ciencies Universitat Autonoma de Barcelona E-08193 Bellaterra, Spain;

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