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A Multifunction Heterojunction Formed Between Pentacene and a Single-Crystal Silicon Nanomembrane

机译：并五苯与单晶硅纳米膜之间形成多功能异质结。

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摘要

A mesh patterned n-type single-crystalline silicon nanomembrane (SiNM) created from a silicon-on-insulator (SOI) wafer is complementally combined with a p-type pentacene layer to form a heterogeneous p-n junction on a flexible plastic substrate. Excellent rectifying characteristics are obtained from the heterogeneous p-n diode. The diode also exhibits photosensitivity at visible wavelengths with a photo-to-dark current ratio exceeding four orders, a responsivity of 0.7 A/W, and an external quantum efficiency of 21.9% at 633 nm. Over 60% average transmittance in the visible spectrum is measured from the heterogeneous multilayer junction on a plastic substrate. Outstanding mechanical bending characteristics are observed with up to 1.08% of strain applied to the diode. These results suggest that organic-inorganic heterogeneous integration may be a viable strategy to build flexible organic-inorganic heterojunction devices and thus enable a number of novel multifunctional applications.
机译：由绝缘体上硅（SOI）晶片制成的网状图案化n型单晶硅纳米膜（SiNM）与p型并五苯层互补结合，在柔性塑料基板上形成异质p-n结。异质p-n二极管具有出色的整流特性。该二极管还在可见波长处表现出光敏性，光暗电流比超过四个数量级，响应度为0.7 A / W，在633 nm处的外部量子效率为21.9％。从塑料基材上的异质多层结测量出可见光谱中超过60％的平均透射率。在向二极管施加高达1.08％的应变时，观察到了出色的机械弯曲特性。这些结果表明，有机-无机异质集成可能是构建灵活的有机-无机异质结器件的可行策略，从而使许多新颖的多功能应用成为可能。

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  • 来源
    《Advanced Functional Materials》 |2013年第27期|3398-3403|共6页
  • 作者

    Jung-Hun Seo; Tae-Yeon Oh; Jungho Park; Weidong Zhou; Byeong-Kwon Ju; Zhenqiang Ma;

  • 作者单位

    Department of Electrical and Computer Engineering University of Wisconsin-Madison Madison, Wl 53706, USA;

    Display and Nanosystem Laboratory College of Engineering Korea University Seoul, 136-713, Republic of Korea;

    Display and Nanosystem Laboratory College of Engineering Korea University Seoul, 136-713, Republic of Korea;

    Department of Electrical Engineering NanoFAB Center University of Texas at Arlington Arlington, TX 76019, USA;

    Display and Nanosystem Laboratory College of Engineering Korea University Seoul, 136-713, Republic of Korea;

    Department of Electrical and Computer Engineering University of Wisconsin-Madison Madison, Wl 53706, USA;

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