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Fused Thiophene Semiconductors: Crystal Structure-Film Microstructure Transistor Performance Correlations

机译：熔融噻吩半导体：晶体结构-膜微结构晶体管性能相关性

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摘要

The molecular packing motifs within crystalline domains should be a key determinant of charge transport in thin-film transistors (TFTs) based on small organic molecules. Despite this implied importance, detailed information about molecular organization in polycrystalline thin films is not available for the vast majority of molecular organic semiconductors. Considering the potential of fused thiophenes as environmentally stable, high-performance semiconductors, it is therefore of interest to investigate their thin film microstructures in relation to the single crystal molecular packing and OTFT performance. Here, the molecular packing motifs of several new benzo[d,d']thieno[3,2-b;4,5-b']dithiophene (BTDT) derivatives are studied both in bulk 3D crystals and as thin films by single crystal diffraction and grazing incidence wide angle X-ray scattering (CIWAXS), respectively. The results show that the BTDT derivative thin films can have significantly different molecular packing from their bulk crystals. For phenylbenzo[d,d/] thieno@@[3,2-b;4,5-b]dithiophene (P-BTDT), 2-biphenylbenzo@@[d,d/]thieno-[3,2-b;4,5-b']dithiophene (Bp-BTDT), 2-naphthalenylbenzo[d,d']thieno[3,2-b;4,5-b']dithiophene (Np-BTDT), and bisbenzo[d,d')thieno[3,2-b;4,5-b'] dithiophene (BBTDT), two lattices co-exist, and are significantly strained versus their single crystal forms. For P-BTDT, the dominance of the more strained lattice relative to the bulk-like lattice likely explains the high carrier mobility. In contrast, poor crystallinity and surface coverage at the dielectric/substrate interface explains the marginal OTFT performance of seemingly similar PF-BTDT films.
机译：结晶域内的分子堆积基序应该是决定基于小有机分子的薄膜晶体管（TFT）中电荷传输的关键因素。尽管具有这种隐含的重要性，但有关绝大多数分子有机半导体的多晶薄膜中分子组织的详细信息尚不可用。考虑到熔融噻吩作为对环境稳定的高性能半导体的潜力，因此研究与单晶分子堆积和OTFT性能有关的薄膜微结构是有意义的。在这里，研究了三种新型苯并[d，d']噻吩并[3,2-b; 4,5-b']二噻吩（BTDT）衍生物的分子堆积图案，它们均在块状3D晶体中以及作为单晶薄膜衍射和掠射入射广角X射线散射（CIWAXS）。结果表明，BTDT衍生物薄膜与其堆积晶体的分子堆积可以有显着不同。对于苯基苯并[d，d /]噻吩@@ [3,2-b; 4,5-b]二噻吩（P-BTDT），2-联苯苯并@ [d，d /]噻吩-[3,2-b ； 4,5-b']二噻吩（Bp-BTDT），2-萘苯并[d，d']噻诺[3,2-b; 4,5-b']二噻吩（Np-BTDT）和双苯并[d ，d'）thieno [3,2-b; 4,5-b']二噻吩（BBTDT），两个晶格共存，并且相对于它们的单晶形式显着应变。对于P-BTDT，应变更大的晶格相对于块状晶格的优势可能解释了高载流子迁移率。相反，在电介质/衬底界面处的较差的结晶度和表面覆盖率解释了看似相似的PF-BTDT膜的边缘OTFT性能。

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  • 来源
    《Advanced Functional Materials》 |2013年第31期|3850-3865|共16页
  • 作者

    Jangdae Youn; Sumit Kewalramani; Jonathan D. Emery; Yanrong Shi; Shiming Zhang; Hsiu-Chieh Chang; You-jhih Liang; Chia-Ming Yeh; Chieh-Yuan Feng; Hui Huang; Charlotte Stern; Liang-Hsiang Chen; Jia-Chong Ho; Ming-Chou Chen; MichaelJ. Bedzyk; Antonio Facchetti; Tobin J. Marks;

  • 作者单位

    Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Rd., Evanston, IL 60208-3113, USA;

    Department of Materials Science and Engineering Department of Physics and Astronomy Northwestern University 2220 Campus Dr., Evanston, IL 60208-3113, USA;

    Department of Materials Science and Engineering Department of Physics and Astronomy Northwestern University 2220 Campus Dr., Evanston, IL 60208-3113, USA;

    Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Rd., Evanston, IL 60208-3113, USA;

    Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Rd., Evanston, IL 60208-3113, USA;

    Department of Chemistry National Central University Jhong-Li, Taiwan, 32054, R.O.C;

    Department of Chemistry National Central University Jhong-Li, Taiwan, 32054, R.O.C;

    Department of Chemistry National Central University Jhong-Li, Taiwan, 32054, R.O.C;

    Department of Chemistry National Central University Jhong-Li, Taiwan, 32054, R.O.C;

    Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Rd., Evanston, IL 60208-3113, USA;

    Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Rd., Evanston, IL 60208-3113, USA;

    Process Technology Division Display Technology Center Industrial Technology Research Institute Chung Hsing Rd., Chutung, Hsinchu, Taiwan, 31040, R.O.C;

    Process Technology Division Display Technology Center Industrial Technology Research Institute Chung Hsing Rd., Chutung, Hsinchu, Taiwan, 31040, R.O.C;

    Department of Chemistry National Central University Jhong-Li, Taiwan, 32054, R.O.C;

    Department of Materials Science and Engineering Department of Physics and Astronomy Northwestern University 2220 Campus Dr., Evanston, IL 60208-3113, USA;

    Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Rd., Evanston, IL 60208-3113, USA;

    Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Rd., Evanston, IL 60208-3113, USA;

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