Core-Brominated Tetraazaperopyrenes as n-Channel Semiconductors for Organic Complementary Circuits on Flexible Substrates

Sonja Ceib; Ute Zschieschang; Marcel Gsanger; Matthias Stolte; Frank Wurthner; Hubert Wadepohl; Hagen Klauk; Lutz H. Cade

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Core-Brominated Tetraazaperopyrenes as n-Channel Semiconductors for Organic Complementary Circuits on Flexible Substrates

机译：核心溴化四氮杂戊并吡咯酮作为用于柔性基板上有机互补电路的n通道半导体

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Organic thin-film transistors (TFTs) are prepared by vacuum deposition and solution shearing of 2,9-bis(perfluoroalkyl)-substituted tetraazaperopyrenes (TAPPs) with bromine substituents at the aromatic core. The TAPP derivatives are synthesized by reacting known unsubstituted TAPPs with bromine in fuming sulphuric acid, and their electrochemical properties are studied in detail by cyclic voltammetry and modelled with density functional theory (DFT) methods. Lowest unoccupied molecular orbital (LUMO) energies and electron affinities indicate that the core-brominated TAPPs should exhibit n-channel semiconducting properties. Current-voltage characteristics of the TFTs established electron mobilities of up to μ_n = 0.032 cm~2 V~(-1) s~(-1) for a derivative which was subsequently processed in the fabrication of a complementary ring oscillator on a flexible plastic substrate (PEN).

机译：有机薄膜晶体管（TFT）通过真空沉积和溶液剪切在芳香族核心处带有溴取代基的2,9-双（全氟烷基）-取代的四氮杂戊二烯（TAPPs）制备。通过将已知的未取代TAPP与溴在发烟硫酸中反应合成TAPP衍生物，并通过循环伏安法详细研究其电化学性质，并使用密度泛函理论（DFT）方法进行建模。最低的未占据分子轨道（LUMO）能量和电子亲和力表明，核心溴化TAPPs应该表现出n沟道半导体特性。 TFT的电流-电压特性建立了高达μ_n= 0.032 cm〜2 V〜（-1）s〜（-1）的电子迁移率，该电子迁移率随后在柔性塑料上制造互补环形振荡器时进行了处理。基材（PEN）。

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《Advanced Functional Materials》 |2013年第31期|3866-3874|共9页
作者
Sonja Ceib; Ute Zschieschang; Marcel Gsanger; Matthias Stolte; Frank Wurthner; Hubert Wadepohl; Hagen Klauk; Lutz H. Cade;
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Anorganisch-Chemisches Institut Universitaet Heidelberg Im Neuenheimer Feld 270, 69120 Heidelberg, Germany;

Max Planck Institute for Solid State Research Heisenbergstr. 1, 70569 Stuttgart, Germany;

Institut fuer Organische Chemie and Center for Nanosystems Chemistry Universitat Wurzburg Am Hubland, 97074 Wuerzburg, Germany;

Institut fuer Organische Chemie and Center for Nanosystems Chemistry Universitat Wurzburg Am Hubland, 97074 Wuerzburg, Germany;

Institut fuer Organische Chemie and Center for Nanosystems Chemistry Universitat Wurzburg Am Hubland, 97074 Wuerzburg, Germany;

Anorganisch-Chemisches Institut Universitaet Heidelberg Im Neuenheimer Feld 270, 69120 Heidelberg, Germany;

Max Planck Institute for Solid State Research Heisenbergstr. 1, 70569 Stuttgart, Germany;

Anorganisch-Chemisches Institut Universitaet Heidelberg Im Neuenheimer Feld 270, 69120 Heidelberg, Germany;

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2. Flexible Complementary Oxide–Semiconductor-Based Circuits Employing n-Channel ZnO and p-Channel SnO Thin-Film Transistors [J] . Li Yun-Shiuan, He Jyun-Ci, Hsu Shu-Ming, Electron Device Letters, IEEE . 2016,第1期

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Core-Brominated Tetraazaperopyrenes as n-Channel Semiconductors for Organic Complementary Circuits on Flexible Substrates

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