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Self-Limited Nanocrystallization-Mediated Activation of Semiconductor Nanocrystal in an Amorphous Solid

机译:半导体纳米晶体在无定形固体中的自限性纳米结晶介导的活化

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摘要

The construction of semiconductor nanocrystal (SNC)-based composites is of fundamental importance for various applications, including telecommunication, lasers, photovoltaics, and spintronics. The major challenges are the intentional insertion of dopants into SNCs for expanding their intrinsic functionalities and the scalable incorporation of activated SNCs into host free of hydroxyl and organic species for stabilizing and integrating their performances. An in situ approach is presented to couple the SNC doping and loading processes through self-limiting nanocrystallization of glassy phase, enabling one-step construction of fully transparent Ca_2O_3 SNC-glass nanocomposites. It is shown that the intentional introduction of various cation/anion impurities (e.g., Fˉ, ln~(3+), and Ni~(2+)) or their combinations into Ca_2O_3 SNCs can be realized by taking advantage of the viscous glass matrix to enhance the desorption barrier of impurity on the SNC surface and strengthen its tendency to incorporate into the SNC lattice. The composite can be rationally activated to show wavelength-tunable and broadband luminescence covering the spectral ranges of near ultraviolet, visible, and near-infrared wavebands. The approach is predicted to be general to other SNC materials for functional modulations and will be promising for scalable fabrication of novel SNC-based composites.
机译:基于半导体纳米晶体(SNC)的复合材料的构造对于包括电信,激光,光伏和自旋电子学在内的各种应用至关重要。主要挑战是有意将掺杂剂插入SNC中以扩展其固有功能,以及将活化的SNC可扩展地掺入不含羟基和有机物质的宿主中以稳定和整合其性能。提出了一种原位方法,通过玻璃相的自限性纳米结晶将SNC掺杂和负载过程耦合在一起,从而实现了一步步构建完全透明的Ca_2O_3 SNC-玻璃纳米复合材料。结果表明,利用粘性玻璃基体可以实现将各种阳离子/阴离子杂质(例如,F intention,ln〜(3+)和Ni〜(2+))或其组合故意引入Ca_2O_3 SNC中。增强SNC表面杂质的解吸势垒,并增强其掺入SNC晶格的趋势。可以合理地激活该复合材料,以显示波长可调和宽带发光,覆盖近紫外,可见光和近红外波段的光谱范围。预计该方法对于功能调制的其他SNC材料是通用的,并且有望用于可伸缩的新型基于SNC的复合材料的制造。

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  • 来源
    《Advanced Functional Materials》 |2013年第43期|5436-5443|共8页
  • 作者单位

    State Key Laboratory of Luminescent Materials and Devices Institute of Optical Communication Materials South China University of Technology Guangzhou, 510640, China,State Key Laboratory of Silicon Materials Department of Materials Science and Engineering Zhejiang University Hangzhou, 310027, China;

    State Key Laboratory of Silicon Materials Department of Materials Science and Engineering Zhejiang University Hangzhou, 310027, China;

    Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education and International Center for Dielectric Research Xi'an Jiaotong University, Xi'an, 710049, China;

    School of Information and Electrical Engineering City College, Zhejiang University Hangzhou, 310015, China;

    State Key Laboratory of Silicon Materials Department of Materials Science and Engineering Zhejiang University Hangzhou, 310027, China;

    State Key Laboratory of Silicon Materials Department of Materials Science and Engineering Zhejiang University Hangzhou, 310027, China;

    Department of Material Chemistry Kyoto University Nishikyo-ku, Kyoto, 615-8510, Japan;

    Department of Material Chemistry Kyoto University Nishikyo-ku, Kyoto, 615-8510, Japan;

    State Key Laboratory of Luminescent Materials and Devices Institute of Optical Communication Materials South China University of Technology Guangzhou, 510640, China,State Key Laboratory of Silicon Materials Department of Materials Science and Engineering Zhejiang University Hangzhou, 310027, China;

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