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首页> 外文期刊>Advanced Functional Materials >n-GaAs/lnCaP/p-CaAs Core-Multishell Nanowire Diodes for Efficient Light-to-Current Conversion
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n-GaAs/lnCaP/p-CaAs Core-Multishell Nanowire Diodes for Efficient Light-to-Current Conversion

机译：n-GaAs / lnCaP / p-CaAs核-多壳纳米线二极管，可实现有效的光电流转换

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摘要

Heterostructure n-GaAs/InGaP/p-CaAs core-multishell nanowire diodes are synthesized by metal-organic vapor-phase epitaxy. This structure allows a reproducible, selective wet etching of the individual shells and therefore a simplified contacting of single nanowire p-i-n junctions. Nanowire diodes show leakage currents in a low pA range and at a high rectification ratio of 3500 (at ±1V). Pronounced electroluminescence at 1.4 eV is measured at room temperature and gives evidence of the device quality. Photocurrent generation is demonstrated at the complete area of the nanowire p-i-n junction by scanning photocurrent microscopy. A solar-conversion efficiency of 4.7%, an open-circuit voltage of 0.5 V and a fill factor of 52% are obtained under AM 1.5G conditions. These results will guide the development of nanowire-based photonic and photovoltaic devices.
机译：通过金属有机气相外延合成异质结构的n-GaAs / InGaP / p-CaAs核-多壳纳米线二极管。这种结构允许对各个壳进行可重现的，选择性的湿法蚀刻，从而简化了单个纳米线p-i-n结的接触。纳米线二极管显示出低pA范围和3500的高整流比（±1V）下的泄漏电流。在室温下测量1.4 eV时的明显电致发光，并提供器件质量的证据。通过扫描光电流显微镜在纳米线p-i-n结的整个区域证明了光电流的产生。在AM 1.5G条件下，太阳能转换效率为4.7％，开路电压为0.5 V，填充系数为52％。这些结果将指导基于纳米线的光子和光伏器件的开发。

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  • 来源
    《Advanced Functional Materials》 |2012年第5期|p.929-936|共8页
  • 作者

    Christoph Gutsche; Andrey Lysov; Daniel Braam; Ingo Regolin; Cregor Keller; Zi-An Li; Martin Geller; Marina Spasova; Werner Pros; Franz-Josef Tegude;

  • 作者单位

    Department of Solid-State Electronics and CeNIDE University of Duisburg-Essen Lotharstr. 55, ZHO, D-47057 Duisburg, Germany;

    Department of Solid-State Electronics and CeNIDE University of Duisburg-Essen Lotharstr. 55, ZHO, D-47057 Duisburg, Germany;

    Department of Experimental Physics and CeNIDE University of Duisburg-Essen Lotharstr. 1, D-47057 Duisburg, Germany;

    Department of Solid-State Electronics and CeNIDE University of Duisburg-Essen Lotharstr. 55, ZHO, D-47057 Duisburg, Germany;

    Department of Solid-State Electronics and CeNIDE University of Duisburg-Essen Lotharstr. 55, ZHO, D-47057 Duisburg, Germany;

    Department of Experimental Physics and CeNIDE University of Duisburg-Essen Lotharstr. 1, D-47057 Duisburg, Germany;

    Department of Experimental Physics and CeNIDE University of Duisburg-Essen Lotharstr. 1, D-47057 Duisburg, Germany;

    Department of Experimental Physics and CeNIDE University of Duisburg-Essen Lotharstr. 1, D-47057 Duisburg, Germany;

    Department of Solid-State Electronics and CeNIDE University of Duisburg-Essen Lotharstr. 55, ZHO, D-47057 Duisburg, Germany;

    Department of Solid-State Electronics and CeNIDE University of Duisburg-Essen Lotharstr. 55, ZHO, D-47057 Duisburg, Germany;

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