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首页> 外文期刊>Advanced Functional Materials >Structure and Morphology of PDI8-CN2 for n-Type Thin-Film Transistors
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Structure and Morphology of PDI8-CN2 for n-Type Thin-Film Transistors

机译：n型薄膜晶体管PDI8-CN2的结构和形态

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摘要

A multiscale investigation of N,N'-bis(n-octyl)-jr:y, dicyanoperylene-3,4:9,10-bis(dicarboximide), PDI8-CN2, shows the same molecular arrangement in the bulk and in thin films sublimated on SiO_2/Si wafers. Non-conventional powder diffraction methods and theoretical calculations concur to provide a coherent picture of the crystalline structure. X-ray diffraction (XRD) and atomic force microscopy (AFM) analyses of films of different thickness deposited at different substrate temperatures indicate the existence of two temperature-dependent deposition regimes: a low-temperature (room temperature) regime and a high-temperature (80-120 C) one, each characterized by different growth mechanisms. These mechanisms eventually result in different morphological and structural features of the films, which appear to be highly correlated with the trend of the electrical parameters that are measured in PDI8-CN2-based field-effect transistors.
机译：N，N'-双（正辛基）-jr：y，双氰基亚丙基-3,4：9,10-双（二甲叉酰亚胺）PDI8-CN2的多尺度研究表明，相同的分子排列在本体和薄壁中SiO_2 / Si晶片上升华的薄膜。非常规粉末衍射方法和理论计算共同提供了晶体结构的连贯图像。对在不同基板温度下沉积的不同厚度的薄膜进行的X射线衍射（XRD）和原子力显微镜（AFM）分析表明，存在两种取决于温度的沉积方式：低温（室温）方式和高温（80-120 C），每个都有不同的生长机制。这些机制最终导致薄膜的不同形态和结构特征，这似乎与在基于PDI8-CN2的场效应晶体管中测量的电参数趋势高度相关。

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  • 来源
    《Advanced Functional Materials》 |2012年第5期|p.943-953|共11页
  • 作者

    Fabiola Liscio; Silvia Milita; Cristiano Albonetti; Pasquale DAngelo; Antonietta Guagliardi; Norberto Masciocchi; Raffaele Guido Delia Valle; Elisabetta Venuti; Aldo Brillante; Fabio Biscarini;

  • 作者单位

    CNR-IMM, Istituto per la Microelettronica e Microsistemi Via P. Gobetti 101, 1-40129 Bologna, Italy;

    CNR-IMM, Istituto per la Microelettronica e Microsistemi Via P. Gobetti 101, 1-40129 Bologna, Italy;

    CNR-ISMN, Istituto per lo Studio dei Materiali Nanostrutturati Via P. Cobetti 101, 1-40129 Bologna, Italy;

    CNR-ISMN, Istituto per lo Studio dei Materiali Nanostrutturati Via P. Cobetti 101, 1-40129 Bologna, Italy,Chemistry Department, Imperial College London,Exhibition Road, South Kensington, London SW7 2AZ, UK;

    CNR-IC, Istituto di Cristallografia Via Amendola 122/O, 70126 Bari, Italy,Dipartimento di Scienze Chimiche e Ambientali,Universita dell'lnsubria, Via Valleggio 11, 1-22100 Como, Italy;

    Dipartimento di Scienze Chimiche e Ambientali Universita dell'lnsubria Via Valleggio 11, 1-22100 Como, Italy;

    Dipartimento Chimica Fisica Inorganica Viale Risorgimento 4, 1-40136 Bologna, Italy;

    Dipartimento Chimica Fisica Inorganica Viale Risorgimento 4, 1-40136 Bologna, Italy;

    Dipartimento Chimica Fisica Inorganica Viale Risorgimento 4, 1-40136 Bologna, Italy;

    CNR-ISMN, Istituto per lo Studio dei Materiali Nanostrutturati Via P. Cobetti 101, 1-40129 Bologna, Italy;

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