机译:基于Silaindacenodithiothioe的低带隙聚合物-氟取代对器件性能和薄膜形态的影响
Department of Chemistry and Centre for Plastic Electronics Imperial College London London, SW7 2AZ, UK;
Department of Chemistry and Centre for Plastic Electronics Imperial College London London, SW7 2AZ, UK;
Department of Chemistry and Centre for Plastic Electronics Imperial College London London, SW7 2AZ, UK;
Department of Physics and Centre for Plastic Electronics Imperial College London London, SW7 2AZ, UK;
Department of Physics and Centre for Plastic Electronics Imperial College London London, SW7 2AZ, UK;
CSIRO Materials Science and Engineering Melbourne, VIC 3169, Australia;
Department of Physics and Centre for Plastic Electronics Imperial College London London, SW7 2AZ, UK;
Department of Chemistry and Centre for Plastic Electronics Imperial College London London, SW7 2AZ, UK;
Department of Chemistry and Centre for Plastic Electronics Imperial College London London, SW7 2AZ, UK;
机译:基于形态学控制的基于二酮吡咯并吡咯的低带隙聚合物的化学结构与器件性能的关系
机译:由低带间隙聚合物导向薄膜制造的偏振近似专制的发光器件
机译:低带隙聚合物光伏器件中C_(70)衍生物的影响:光谱互补和形态优化
机译:用于塑料电子器件的LEP掺杂聚合物薄膜的带隙调谐
机译:低带隙聚合物太阳能电池的结构性能相关性检验。
机译:调整表面能通过氟取代的共轭聚合物烷基侧链的形成:对薄膜相分离的影响太阳能电池的性能与性能
机译:基于silaindacenodithiophene的低带隙聚合物 - 氟取代对器件性能和膜形态的影响
机译:确定与提高高带隙铜基I-III-VI(sub 2)黄铜矿薄膜光伏器件性能有关的电子特性。最终分包合同报告2004年4月27日至2007年9月15日