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High-Sensitivity p-n Junction Photodiodes Based on PbS Nanocrystal Quantum Dots

机译：基于PbS纳米晶体量子点的高灵敏度PN结光电二极管

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摘要

Chemically synthesized nanocrystal quantum dots (NQDs) are promising materials for applications in solution-processable optoelectronic devices such as light emitting diodes, photodetectors, and solar cells. Here, we fabricate and study two types of p-n junction photodiodes in which the photoactive p-layer is made from PbS NQDs while the transparent n-layer is fabricated from wide bandgap oxides (ZnO or TiO_2). By using a p-n junction architecture we are able to significantly reduce the dark current compared to earlier Schottky junction devices without reducing external quantum efficiency (EQE), which reaches values of up to -80%. The use of this device architecture also allows us to significantly reduce noise and obtain high detectivity (>10~(12) cm Hz~(1/2) W~(-1)) extending to the near infrared past 1 μm. We observe that the spectral shape of the photoresponse exhibits a significant dependence on applied bias, and specifically, the EQE sharply increases around 500-600 nm at reverse biases greater than 1 V. We attribute this behavior to a "turn-on" of an additional contribution to the photocurrent due to electrons excited to the conduction band from the occupied mid-gap states.
机译：化学合成的纳米晶体量子点（NQD）是有前途的材料，可用于可溶液处理的光电器件中，例如发光二极管，光电探测器和太阳能电池。在这里，我们制造和研究两种类型的p-n结光电二极管，其中光敏p层由PbS NQDs制成，而透明n层由宽带隙氧化物（ZnO或TiO_2）制成。通过使用p-n结结构，与较早的肖特基结器件相比，我们能够显着降低暗电流，而不会降低外部量子效率（EQE），该效率高达-80％。这种设备架构的使用还使我们能够显着降低噪声并获得延伸到近红外超过1μm的高探测灵敏度（> 10〜（12）cm Hz〜（1/2）W〜（-1））。我们观察到，光响应的光谱形状对施加的偏压表现出显着的依赖性，特别是，当反向偏压大于1 V时，EQE在500-600 nm处急剧增加。我们将此行为归因于电子的“开启”。由于电子从占据的中间能隙态被激发到导带，因此对光电流的额外贡献。

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  • 来源
    《Advanced Functional Materials》 |2012年第8期|p.1741-1748|共8页
  • 作者

    Bhola N. Pal; Istvan Robel; Aditya Mohite; Rawiwan Laocharoensuk; Donald J. Werder; Victor I. Klimov;

  • 作者单位

    Center for Advanced Solar Photophysics Chemistry Division Los Alamos National Laboratory Los Alamos, NM 87545, USA;

    Center for Advanced Solar Photophysics Chemistry Division Los Alamos National Laboratory Los Alamos, NM 87545, USA;

    Center for Integrated Nanotechnologies Los Alamos National Laboratory Los Alamos, NM 87545, USA;

    Center for Integrated Nanotechnologies Los Alamos National Laboratory Los Alamos, NM 87545, USA;

    Center for Advanced Solar Photophysics Chemistry Division Los Alamos National Laboratory Los Alamos, NM 87545, USA;

    Center for Advanced Solar Photophysics Chemistry Division Los Alamos National Laboratory Los Alamos, NM 87545, USA;

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