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Metal-Free Growth of Nanographene on Silicon Oxides for Transparent Conducting Applications

机译：纳米二氧化硅在氧化硅上的无金属生长，用于透明导电应用

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摘要

Conventional methods to prepare targe-area graphene for transparent conducting electrodes involve the wet etching of the metal catalyst and the transfer of the graphene film, which can degrade the film through the creation of wrinkles, cracks, or tears. The resulting films may also be obscured by residual metal impurities and polymer contaminants. Here, it is shown that direct growth of large-area flat nanographene films on silica can be achieved at low temperature (400 ℃) by chemical vapor deposition without the use of metal catalysts. Raman spectroscopy and TEM confirm the formation of a hexagonal atomic network of sp~2-bonded carbon with a domain size of about 3-5 nm. Further spectroscopic analysis reveals the formation of SiC between the nanographene and SiO_2, indicating that SiC acts as a catalyst. The optical transmittance of the graphene films is comparable with transferred CVD graphene grown on Cu foils. Despite the fact that the electrical conductivity is an order of magnitude lower than CVD graphene grown on metals, the sheet resistance remains 1-2 orders of magnitude better than well-reduced graphene oxides.
机译：制备用于透明导电电极的靶区石墨烯的常规方法包括金属催化剂的湿蚀刻和石墨烯膜的转移，这可以通过产生皱纹，裂缝或撕裂来降解膜。残留的金属杂质和聚合物污染物也可能掩盖所得的薄膜。在此表明，可以在低温（400℃）下通过化学气相沉积法在不使用金属催化剂的情况下实现大面积扁平纳米石墨烯膜在二氧化硅上的直接生长。拉曼光谱法和TEM证实了sp_2键合碳的六边形原子网络的形成，其畴尺寸约为3-5nm。进一步的光谱分析表明，在纳米石墨烯和SiO_2之间形成了SiC，表明SiC起到了催化剂的作用。石墨烯薄膜的透光率与生长在铜箔上的转移CVD石墨烯相当。尽管事实上电导率比在金属上生长的CVD石墨烯低一个数量级，但薄层电阻仍比还原良好的石墨烯氧化物好1-2个数量级。

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  • 来源
    《Advanced Functional Materials》 |2012年第10期|p.2123-2128|共6页
  • 作者

    Henry Medina; Yung-Chang Lin; Chuanhongjin; Chun-Chieh Lu; Chao-Hui Yeh; Kun-Ping Huang; Kazu Suenaga; John Robertson; Po-Wen Chiu;

  • 作者单位

    Department of Electrical Engineering National Tsing Hua University Hsinchu 30013, Taiwan;

    Department of Electrical Engineering National Tsing Hua University Hsinchu 30013, Taiwan;

    National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba 305-8565, Japan;

    Department of Electrical Engineering National Tsing Hua University Hsinchu 30013, Taiwan;

    Department of Electrical Engineering National Tsing Hua University Hsinchu 30013, Taiwan;

    Mechanical and Systems Research Laboratories Industrial Technology Research Institute Hsinchu 31040, Taiwan;

    National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba 305-8565, Japan;

    Cambridge University Engineering Department 9 JJ Thomson Avenue Cambridge CB3 0FA.UK;

    Department of Electrical Engineering National Tsing Hua University Hsinchu 30013, Taiwan Cambridge University Engineering Department 9 JJ Thomson Avenue Cambridge CB3 0FA.UK;

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