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首页> 外文期刊>Advanced Functional Materials >Sources of Hysteresis in Carbon Nanotube Field-Effect Transistors and Their Elimination Via Methylsiloxane Encapsulants and Optimized Growth Procedures
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Sources of Hysteresis in Carbon Nanotube Field-Effect Transistors and Their Elimination Via Methylsiloxane Encapsulants and Optimized Growth Procedures

机译：碳纳米管场效应晶体管中的磁滞源及其通过甲基硅氧烷密封剂消除和优化的生长程序

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摘要

The origins of gate-induced hysteresis in carbon nanotube field-effect transistors are explained and techniques to eliminate this hysteresis with encapsulating layers of methylsiloxane and modified processes for nanotube growth are reported. A combined experimental and theoretical analysis of the dependence of hysteresis on the gate voltage sweep-rate reveals the locations, types, and densities of defects that contribute to hysteresis. Devices with designs that eliminate these defects exhibit more than ten times reduction in hysteresis compared to conventional layouts. Demonstrations in individual transistors that use both networks and arrays of nanotubes, and in simple logic gates built with these devices, illustrate the utility of the proposed approaches.
机译：解释了碳纳米管场效应晶体管中栅极感应磁滞的起源，并报道了用甲基硅氧烷包封层消除这种磁滞的技术以及纳米管生长的改进工艺。磁滞对栅极电压扫描速率的依赖性的组合实验和理论分析揭示了导致磁滞的缺陷的位置，类型和密度。与传统布局相比，具有消除这些缺陷的设计的器件的磁滞降低了十倍以上。在同时使用网络和纳米管阵列的单个晶体管中进行的演示，以及在使用这些器件构建的简单逻辑门中的演示说明了所提出方法的实用性。

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  • 来源
    《Advanced Functional Materials》 |2012年第11期|p.2276-2284|共9页
  • 作者

    Sung Hun Jin; Ahmad E. Islam; Tae-il Kim; Ji-hun Kim; Muhammad A. Alam; John A. Rogers;

  • 作者单位

    Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana, IL 61801, USA;

    Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana, IL 61801, USA;

    Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana, IL 61801, USA;

    Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana, IL 61801, USA;

    Department of Electrical and Computer Engineering Purdue University West Lafayette, IN 47906, USA;

    Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana, IL 61801, USA,Departments of Chemistry Mechanical Science and Engineering Electrical, and Computer Engineering Beckman Institute for Advanced Science and Technology University of Illinois at Urbana-Champaign Urbana, IL 61801, USA;

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