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Incipient Ferroelectricity in Al-Doped HfO_2 Thin Films

机译：Al掺杂HfO_2薄膜的初始铁电

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摘要

Incipient ferroelectricity is known to occur in perovskites such as SrTiO_3, KTaO_3, and CaTiO_3. For the first time it is shown that the intensively researched HfO_2 thin films (16 nm) also possess ferroelectric properties when aluminium is incorporated into the host lattice. Polarization measurements on Al:HfO_2 based metal-insulator-metal capacitors show an antifer-roelectric-to-ferroelectric phase transition depending on annealing conditions and aluminium content. Structural investigation of the electrically characterized capacitors by grazing incidence X-ray diffraction is presented in order to gain further insight on the potential origin of ferroelectricity. The non-centrosymmetry of the elementary cell, which is essential for ferroelectricity, is assumed to originate from an orthorhombic phase of space group Pbc2_1 stabilized for low Al doping in HfO_2. The ferroelectric properties of the modified HfO_2 thin films yield high potential for various ferroelectric, piezoelectric, and pyroelectric applications. Furthermore, due to the extensive knowledge accumulated by various research groups regarding the HfO_2 dielectric, an immediate relevance of ferroelectric hafnium oxide thin films is anticipated by the authors.
机译：已知初始铁电发生在钙钛矿中，例如SrTiO_3，KTaO_3和CaTiO_3。首次表明，当铝掺入主体晶格中时，经过深入研究的HfO_2薄膜（16 nm）也具有铁电性能。基于Al：HfO_2的金属-绝缘体-金属电容器的极化测量结果显示，取决于退火条件和铝含量，铁电-铁电之间会发生反铁电过渡。本文介绍了通过掠入射X射线衍射对电特性电容器进行的结构研究，以便进一步了解铁电的潜在来源。假定基本单元的非中心对称性是铁电性所必需的，其非对称性源自为HfO_2中低Al掺杂而稳定的空间群Pbc2_1的正交相。改性的HfO_2薄膜的铁电特性为各种铁电，压电和热电应用提供了高潜力。此外，由于各个研究小组积累了有关HfO_2电介质的广泛知识，因此作者预料到了铁电氧化oxide薄膜的直接相关性。

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  • 来源
    《Advanced Functional Materials》 |2012年第11期|p.2412-2417|共6页
  • 作者

    Stefan Mueller; Johannes Mueller; Aarti Singh; Stefan Riedel; Jonas Sundqvist; Uwe Schroeder; Thomas Mikolajick;

  • 作者单位

    NaMLab gGmbH Dresden University of Technology Noethnitzerstrasse 64, 01187 Dresden, Germany;

    Fraunhofer Center Nanoelectronic Technologies Koenigsbrueckerstrasse 180, 01099 Dresden, Germany;

    NaMLab gGmbH Dresden University of Technology Noethnitzerstrasse 64, 01187 Dresden, Germany;

    Fraunhofer Center Nanoelectronic Technologies Koenigsbrueckerstrasse 180, 01099 Dresden, Germany;

    Fraunhofer Center Nanoelectronic Technologies Koenigsbrueckerstrasse 180, 01099 Dresden, Germany;

    NaMLab gGmbH Dresden University of Technology Noethnitzerstrasse 64, 01187 Dresden, Germany;

    NaMLab gGmbH Dresden University of Technology Noethnitzerstrasse 64, 01187 Dresden, Germany;

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