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首页> 外文期刊>Advanced Functional Materials >Correlating Emissive Non-Geminate Charge Recombination with Photocurrent Generation Efficiency in Polymer/ Perylene Diimide Organic Photovoltaic Blend Films
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Correlating Emissive Non-Geminate Charge Recombination with Photocurrent Generation Efficiency in Polymer/ Perylene Diimide Organic Photovoltaic Blend Films

机译：聚合物/ Per二酰亚胺有机光伏共混薄膜中的发射非叠氮化物电荷复合与光电流产生效率的相关性

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摘要

Evidence for a correlation between the dynamics of emissive non-geminate charge recombination within organic photovoltaic (OPV) blend films and the photocurrent generation efficiency of the corresponding blend-based solar cells is presented. Two model OPV systems that consist of binary blends of electron acceptor W-bis(1-ethylpropyl)-3,4,9,10-perylene tetracarboxy diimide (PDI) with either poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) or poly(9,9-dioctylindenofluorene-co-benzo-thiadiazole) (PIF8BT) as electron donor are studied. For the F8BT:PDI and PIF8BT:PDI devices photocurrent generation efficiency is shown to be related to the POI crystallinity. In contrast to the F8BT:PDI system, thermal annealing of the PIF8BT:PDI layer at 90 C has a positive impact on the photocurrent generation efficiency and yields a corresponding increase in PL quenching. The devices of both blends have a strongly reduced photocurrent on higher temperature annealing at 120 ℃. Delayed luminescence spectroscopy suggests that the improved efficiency of photocurrent generation for the 90 ℃ annealed PSF8BT:PDI layer is a result of optimized transport of the photogenerated charge-carriers as well as of enhanced PL quenching due to the maintenance of optimized polymer/PDI interfaces. The studies propose that charge transport in the blend films can be indirectly monitored from the recombination dynamics of free carriers that cause the delayed luminescence. For the F8BT:PDI and PIF8BT:PDI blend films these dynamics are best described by a power-law decay function and are found to be temperature dependent.
机译：提出了有机光伏（OPV）混合薄膜内的非自发光非复合电荷重组动力学与相应的基于混合太阳能电池的光电流产生效率之间的相关性的证据。两种模型OPV系统，由电子受体W-双（1-乙基丙基）-3,4,9,10-per四羧基二酰亚胺（PDI）与聚（9,9-二辛基芴-co-苯并噻二唑）的二元共混物（研究了F8BT）或作为电子供体的聚（9,9-二辛基萘芴-co-苯并噻二唑）（PIF8BT）。对于F8BT：PDI和PIF8BT：PDI器件，光电流产生效率显示出与POI结晶度有关。与F8BT：PDI系统相比，PIF8BT：PDI层在90°C的温度下进行热退火会对光电流产生效率产生积极影响，并相应增加PL猝灭。两种共混物的器件在120℃的高温退火下具有显着降低的光电流。延迟发光光谱表明，90℃退火的PSF8BT：PDI层的光电流产生效率提高是由于光生电荷载流子的优化传输以及由于维持了优化的聚合物/ PDI界面而增强了PL猝灭的结果。研究表明，可以通过引起延迟发光的自由载体的重组动力学间接监测共混膜中的电荷传输。对于F8BT：PDI和PIF8BT：PDI混合膜，这些动力学最好通过幂律衰减函数来描述，并且发现它们与温度有关。

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  • 来源
    《Advanced Functional Materials》 |2012年第11期|p.2318-2326|共9页
  • 作者

    Panagiotis E. Keivanidis; Valentin Kamm; Weimin Zhang; George Floudas; Frederic Laquai; lain McCulloch; Donal D. C. Bradley; Jenny Nelson;

  • 作者单位

    Department of Physics, Blackett Laboratory Imperial College London South Kensington Campus, London SW7 2BZ, UK,Centre for Plastic Electronics, Blackett Laboratory Imperial College London, South Kensington Campus London SW7 2BZ, UK,Centre for Nano Science and Technology @Polimi, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133 Milan, Italy;

    Max Planck Institute for Polymer Research Max Planck Research Group for Organic Optoelectronics Ackermannweg 10, 55128, Mainz, Germany;

    Centre for Plastic Electronics, Blackett Laboratory Imperial College London, South Kensington Campus London SW7 2BZ, UK,Department of Chemistry Imperial College London South Kensington Campus, London SW7 2BW, UK;

    Department of Physics University of loannina 451 10 loannina, Greece, Foundation for Research and Technology- Hellas (FORTH-BRI), Greece;

    Max Planck Institute for Polymer Research Max Planck Research Group for Organic Optoelectronics Ackermannweg 10, 55128, Mainz, Germany;

    Centre for Plastic Electronics, Blackett Laboratory Imperial College London, South Kensington Campus London SW7 2BZ, UK,Department of Chemistry Imperial College London South Kensington Campus, London SW7 2BW, UK;

    Department of Physics, Blackett Laboratory Imperial College London South Kensington Campus, London SW7 2BZ, UK,Centre for Plastic Electronics, Blackett Laboratory Imperial College London, South Kensington Campus London SW7 2BZ, UK;

    Department of Physics, Blackett Laboratory Imperial College London South Kensington Campus, London SW7 2BZ, UK,Centre for Plastic Electronics, Blackett Laboratory Imperial College London, South Kensington Campus London SW7 2BZ, UK;

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