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首页> 外文期刊>Advanced Functional Materials >Investigation of Optical and Structural Stability of Localized Surface Plasmon Mediated Light-Emitting Diodes by Ag and Ag/SiO_2 Nanoparticles
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Investigation of Optical and Structural Stability of Localized Surface Plasmon Mediated Light-Emitting Diodes by Ag and Ag/SiO_2 Nanoparticles

机译：Ag和Ag / SiO_2纳米粒子研究局域表面等离激元介导的发光二极管的光学和结构稳定性

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摘要

Localized surface plasmon (LSP) effects due to Ag and Ag/SiO_2 nanoparticles (NPs) deposited on GaN/lnCaN multiquantum well (MQW) light-emitting diode (LED) structures are studied. The colloidal NPs are synthesized by a sol-gel method and drop-cased on the LED structures. The surface density of NPs its controlled by the concentration of the NP solution. Theoretical modeling is performed for the emission spectrum and the electric field distribution of LSP resonance for Ag/SiO_2 NPs. Enhanced photoluminescence (PL) efficiency is observed in the LED structures and the amount of PL enhancement increases with increasing the surface density of Ag and Ag/SiO_2 NPs. These effects are attributed to resonance coupling between the MQW and LSP in the NPs. It is also shown that the PL enhancement attainable with Ag NPs and Ag/SiO_2 NPs is comparable, but the latter displays a much higher stability with respect to long-term storage and annealing due to a barrier for NP agglomeration, Ag oxidation, and impurity diffusion provided by the SiO_2 shell.
机译：研究了由于Ag和Ag / SiO_2纳米颗粒（NPs）沉积在GaN / lnCaN多量子阱（MQW）发光二极管（LED）结构上而引起的局部表面等离子体激元（LSP）效应。胶体NP是通过溶胶-凝胶法合成的，并直接封装在LED结构上。 NP的表面密度由NP溶液的浓度控制。对Ag / SiO_2 NPs的发射光谱和LSP共振的电场分布进行了理论建模。在LED结构中观察到增强的光致发光（PL）效率，并且PL增强的量随着Ag和Ag / SiO_2 NP的表面密度的增加而增加。这些影响归因于NP中MQW和LSP之间的共振耦合。还表明，Ag NPs和Ag / SiO_2 NPs可以实现PL增强，但是由于NP团聚，Ag氧化和杂质的障碍，后者在长期存储和退火方面表现出更高的稳定性。 SiO_2壳提供的扩散。

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  • 来源
    《Advanced Functional Materials》 |2012年第13期|p.2728-2734|共7页
  • 作者

    Lee-Woon jang; Dae-Woo jeon; Myoung Kim; Ju-Won Jeon; Alexander Y. Polyakov; Jin-Woo Ju; Seung-Jae Lee; Jong-Hyeob Baek; Jin-Kyu Yang; In-Hwan Lee;

  • 作者单位

    School of Advanced Materials Engineering and Research Center of Advanced Materials Development and Semiconductor Physics Research Center Chonbuk National University Jeonju 561-756, Korea;

    School of Advanced Materials Engineering and Research Center of Advanced Materials Development and Semiconductor Physics Research Center Chonbuk National University Jeonju 561-756, Korea;

    School of Advanced Materials Engineering and Research Center of Advanced Materials Development and Semiconductor Physics Research Center Chonbuk National University Jeonju 561-756, Korea;

    School of Advanced Materials Engineering and Research Center of Advanced Materials Development and Semiconductor Physics Research Center Chonbuk National University Jeonju 561-756, Korea;

    School of Advanced Materials Engineering and Research Center of Advanced Materials Development and Semiconductor Physics Research Center Chonbuk National University Jeonju 561-756, Korea;

    LED Device Team, Korea Photonics Technology Institute Gwangju 500-779, Korea;

    LED Device Team, Korea Photonics Technology Institute Gwangju 500-779, Korea;

    LED Device Team, Korea Photonics Technology Institute Gwangju 500-779, Korea;

    Department of Optical Engineering Kongju National University Kongju, Chungnam 314-701, Korea;

    School of Advanced Materials Engineering and Research Center of Advanced Materials Development and Semiconductor Physics Research Center Chonbuk National University Jeonju 561-756, Korea;

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