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首页> 外文期刊>Advanced Functional Materials >Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor
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Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor

机译：使用氧离子迁移/扩散在非晶InGaZnO忆阻器中实现的突触学习和记忆功能

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摘要

A single synaptic device with inherent learning and memory functions is demonstrated based on an amorphous InCaZnO (α-ICZO) memristor; several essential synaptic functions are simultaneously achieved in such a single device, including nonlinear transmission characteristics, spike-rate-dependent and spike-timing-dependent plasticity, long-term/short-term plasticity (LSP and STP) and "learning-experience" behavior. These characteristics bear striking resemblances to certain learning and memory functions of biological systems. Especially, a "learning-experience" function is obtained for the first time, which is thought to be related to the metastable local structures in a-ICZO. These functions are interrelated: frequent stimulation can cause an enhancement of LTP, both spike-rate-dependent and spike-timing-dependent plasticity is the same on this point; and, the STP-to-LTP transition can occur through repeated "stimulation" training. The physical mechanism of device operation, which does not strictly follow the memristor model, is attributed to oxygen ion migration/diffusion. A correlation between short-term memory and ion diffusion is established by studying the temperature dependence of the relaxation processes of STP and ion diffusion. The realization of important synaptic functions and the establishment of a dynamic model would promote more accurate modeling of the synapse for artificial neural network.
机译：演示了基于非晶InCaZnO（α-ICZO）忆阻器的具有固有学习和记忆功能的单个突触设备。在这样的单个设备中，可以同时实现几种基本的突触功能，包括非线性传递特性，依赖于尖峰速率和依赖于尖峰时序的可塑性，长期/短期可塑性（LSP和STP）以及“学习经验”行为。这些特征与生物系统的某些学习和记忆功能极为相似。特别是，首次获得“学习经验”功能，该功能被认为与a-ICZO中的亚稳局部结构有关。这些功能是相互关联的：频繁的刺激会导致LTP增强，在这一点上，依赖于尖峰速率的可塑性和依赖于尖峰时序的可塑性是相同的。并且，可以通过重复的“刺激”训练来实现STP到LTP的过渡。器件操作的物理机制并未严格遵循忆阻器模型，这归因于氧离子的迁移/扩散。通过研究STP和离子扩散弛豫过程的温度依赖性，可以建立短期记忆与离子扩散之间的相关性。重要的突触功能的实现和动力学模型的建立将促进针对人工神经网络的突触的更准确的建模。

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  • 来源
    《Advanced Functional Materials》 |2012年第13期|p.2759-2765|共7页
  • 作者

    Zhong Qiang Wang; Hai Yang Xu; Xing Hua Li; Hao Yu; Yi Chun Liu; Xiao Juan Zhu;

  • 作者单位

    Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024, P. R. China;

    Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024, P. R. China;

    Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024, P. R. China;

    Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024, P. R. China;

    Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024, P. R. China;

    The institute of Genetics and Cytology Northeast Normal University Changchun 130024, P. R. China;

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