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首页> 外文期刊>Advanced Functional Materials >A Highly Efficient, Blue-Phosphorescent Device Based on a Wide-Bandgap Host/Flrpic: Rational Design of the Carbazole and Phosphine Oxide Moieties on Tetraphenylsilane
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A Highly Efficient, Blue-Phosphorescent Device Based on a Wide-Bandgap Host/Flrpic: Rational Design of the Carbazole and Phosphine Oxide Moieties on Tetraphenylsilane

机译：基于宽带隙基质/荧光的高效蓝磷光器件：四苯基硅烷上咔唑和氧化膦部分的合理设计

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摘要

A new series of wide-bandgap materials, 4-dipenylphosphine oxide-4'-9H-carbazol-9-yl-tetraphenylsilane (CSPO), 4-diphenylphosphine oxide-4',4"-di(9H-carbazol-9-yl)-tetraphenylsilane (pDCSPO), 4-diphenylphosphine oxide -4'-[3-(9H-carbazol-9-yl)-carbazole-9-yl]-tetraphenylsilane (DCSPO), 4-diphenylphosphine oxide-4',4",4'"-tri(9H-carbazol-9-yl)-tetraphenylsilane (pTCSPO) and 4-diphenylphosphine oxide -4'-[3,6-di(9H-carbazol-9-yl)-9H-carbazol-9-yl]-tetraphenylsilane (TCSPO), containing different ratios and linking fashions of p-type carbazole units and n-type phosphine oxide units, are designed and obtained. DCSPO is the best host in Flrpic-doped devices for this series of compounds. By utilizing DCzSi and DPOSi as hole- and electron-transporting layers, a high EQE of 27.5% and a maximum current efficiency of 49.4 cd A~(-1) are achieved in the DCSPO/Flrpic doped device. Even at 10 000 cd m~(-2), the efficiencies still remain 41.2 cd A~(-1) and 23.0%, respectively.
机译：一系列新的宽带隙材料，4-二苯基氧化膦-4'-9H-咔唑-9-基-四苯基硅烷（CSPO），4-二苯基氧化膦-4'，4“-二（9H-咔唑-9-基）-四苯基硅烷（pDCSPO），4-二苯基氧化膦-4'-[3-（9H-咔唑-9-基）-咔唑-9-基]-四苯基硅烷（DCSPO），4-二苯基氧化膦-4'，4“ ，4'“-三（9H-咔唑-9-基）-四苯基硅烷（pTCSPO）和4-二苯基氧化膦-4'-[3,6-二（9H-咔唑-9-基）-9H-咔唑-9设计并获得了具有不同比率和p型咔唑单元和n型氧化膦单元的连接方式的-yl]-四苯基硅烷（TCSPO），DCSPO是该系列化合物在掺氟器件中的最佳主体。通过将DCzSi和DPOSi用作空穴和电子传输层，即使在10000 cd m的DCSPO / Flrpic掺杂器件中，也可实现27.5％的高EQE和49.4 cd A〜（-1）的最大电流效率。 〜（-2），效率仍然分别保持为41.2 cd A〜（-1）和23.0％。

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  • 来源
    《Advanced Functional Materials》 |2012年第13期|p.2830-2836|共7页
  • 作者

    He Liu; Gang Cheng; Dehua Hu; Fangzhong Shen; Ying Lv; Guanncm Sun; Bing Yang; Ping Lu; Yuguang Ma;

  • 作者单位

    State Key Laboratory of Supramolecular Structure and Materials Jilin University Changchun, 130012, P. R. China;

    State Key Laboratory on Integrated Optoelectronics College of Electronics Science and Engineering Jilin University Changchun, 130012, P. R. China;

    State Key Laboratory of Supramolecular Structure and Materials Jilin University Changchun, 130012, P. R. China;

    State Key Laboratory of Supramolecular Structure and Materials Jilin University Changchun, 130012, P. R. China;

    State Key Laboratory of Supramolecular Structure and Materials Jilin University Changchun, 130012, P. R. China;

    State Key Laboratory of Supramolecular Structure and Materials Jilin University Changchun, 130012, P. R. China;

    State Key Laboratory of Supramolecular Structure and Materials Jilin University Changchun, 130012, P. R. China;

    State Key Laboratory of Supramolecular Structure and Materials Jilin University Changchun, 130012, P. R. China;

    State Key Laboratory of Supramolecular Structure and Materials Jilin University Changchun, 130012, P. R. China;

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