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Co-Implantation of Carbon and Protons: An Integrated Silicon Device Technology Compatible Method to Generate the Lasing G-Center

机译:碳和质子的共注入:一种集成的硅器件技术兼容的方法,用于产生激光G中心

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摘要

The optically active carbon related G-center is attracting great interest because of evidence that it can provide lasing in silicon. Here a technique to form the G-center in silicon is reported. The carbon G-center is generated by implantation of carbon followed by proton irradiation. Photoluminescence measurements confirm the controlled formation of high levels of the G-center that, importantly, completely dominates the emission spectrum. Unlike previous methods of introducing the G-center the current approach significantly is truly fully compatible with standard silicon ULSI (ultralarge scale integration) technology.
机译:光学活性炭相关的G中心引起了极大的兴趣,因为有证据表明它可以提供硅激光。这里报道了一种在硅中形成G中心的技术。碳G中心是通过注入碳然后进行质子辐照产生的。光致发光测量结果证实了可控制的高水平G中心的形成,重要的是,G中心完全控制了发射光谱。与以前引入G中心的方法不同,当前的方法与标准硅ULSI(超大规模集成)技术真正完全兼容。

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  • 来源
    《Advanced Functional Materials》 |2012年第13期|p.2709-2712|共4页
  • 作者单位

    Advanced Technology Institute Faculty of Engineering and Physical Sciences University of Surrey Guildford, Surrey GU2 7XH, UK,Institute of Microengineering and Nanoelectronics Universiti Kebangsaan Malaysia Bangi, 43000 Selangor, Malaysia;

    Advanced Technology Institute Faculty of Engineering and Physical Sciences University of Surrey Guildford, Surrey GU2 7XH, UK;

    Advanced Technology Institute Faculty of Engineering and Physical Sciences University of Surrey Guildford, Surrey GU2 7XH, UK;

    Advanced Technology Institute Faculty of Engineering and Physical Sciences University of Surrey Guildford, Surrey GU2 7XH, UK;

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