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Barium Hydroxide as an Interlayer Between Zinc Oxide and a Luminescent Conjugated Polymer for Light-Emitting Diodes

机译:氢氧化钡作为氧化锌和发光二极管的发光共轭聚合物之间的中间层

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摘要

A study of hybrid light-emitting diodes (HyLEDs) fabricated with and without solution-processible Cs_2CO_3 and Ba(OH)_2 inorganic interlayers is presented. The interlayers are deposited between a zinc oxide electron-injection layer and a fluorescent emissive polymer poly(9-dioctyl fluorine-alt-benzothiadiazole) (F8BT) layer, with a thermally evaporated MoO_3/Au layer used as top anode contact. In comparison to Cs_2CO_3, the Ba(OH)_2 interlayer shows improved charge carrier balance in bipolar devices and reduced exciton quenching in photoiuminance studies at the ZnO/Ba(OH)_2/F8BT interface compared to the Cs_2CO_3 interlayer. A luminance efficiency of≈28 cd A~(-1) (external quantum efficiency (EQE) ≈ 9%) is achieved for ≈1.2 μm thick single F8BT layer based HyLEDs. Enhanced out-coupling with the aid of a hemispherical lens allows further efficiency improvement by a factor of 1.7, increasing the luminance efficiency to ≈47cd A~(-1), corresponding to an EQE of 15%. The photovoltaic response of these structures is also studied to gain an insight into the effects of interfacial properties on the photoinduced charge generation and back-recombination, which reveal that Ba(OH)_2 acts as better hole blocking layer than the Cs_2CO_3 interlayer.
机译:提出了一种具有和不具有可溶液处理的Cs_2CO_3和Ba(OH)_2无机中间层的混合发光二极管(HyLED)的研究。中间层沉积在氧化锌电子注入层和荧光发射聚合物聚(9-二辛基氟-alt-苯并噻二唑)(F8BT)层之间,热蒸发的MoO_3 / Au层用作顶部阳极触点。与Cs_2CO_3相比,与Cs_2CO_3中间层相比,Ba(OH)_2中间层在双极型器件中显示出改善的电荷载流子平衡,并在ZnO / Ba(OH)_2 / F8BT界面的光致发光研究中减少了激子猝灭。对于基于≈1.2μm厚的单个F8BT层的HyLED,可实现≈28cd A〜(-1)的亮度效率(外部量子效率(EQE)≈9%)。借助半球透镜增强的输出耦合使效率进一步提高了1.7倍,从而将亮度效率提高到≈47cdA〜(-1),相当于15%的EQE。还研究了这些结构的光电响应,以深入了解界面性质对光诱导电荷产生和反向复合的影响,这表明Ba(OH)_2比Cs_2CO_3中间层更好地充当空穴阻挡层。

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  • 来源
    《Advanced Functional Materials》 |2012年第19期|4165-4171|共7页
  • 作者单位

    Cavendish Laboratory JJ Thomson Avenue, Cambridge, CB3 OHE, UK;

    Cavendish Laboratory JJ Thomson Avenue, Cambridge, CB3 OHE, UK;

    Cavendish Laboratory JJ Thomson Avenue, Cambridge, CB3 OHE, UK;

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