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Critical Property in Relaxor-PbTiO_ Single Crystals - Shear Piezoelectric Response

机译：弛豫-PbTiO_单晶的临界特性-剪切压电响应

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摘要

The shear piezoelectric behavior in relaxor-PbTiO_3 (PT) single crystals is investigated with regard to the crystal phase. High levels of shear piezoelectric activity, d_15 or d_24 >2000 pC N~-1 are observed for single-domain rhombo-hedral (R), orthorhombic (O), and tetragonal (T) relaxor-PT crystals. The high piezoelectric response is attributed to a flattening of the Gibbs free energy at compositions close to the morphotropic phase boundaries, where polarization rotation is easily accomplished by applying a perpendicular electric field. The shear piezoelectric behavior of perovskite ferroelectric crystals is discussed with respect to ferroelectric-ferroelectric phase transitions and the dc bias field using a phenomenological approach. The relationship between the single-domain shear piezoelectric response and piezoelectric activities in domain-engineered configurations is also given in this paper. From an application viewpoint, the temperature and ac-field drive stability for shear piezoelectric responses are investigated. A temperature-independent shear piezoelectric response (d_24, in the range of-50 ℃ to the O-T phase-transition temperature) is thermodynamically expected and experimentally confirmed in orthorhombic relaxor-PT crystals; a relatively high ac-field drive stability (5 kV cm"1) is obtained in manganese-modified relaxor-PT crystals. For all thickness shear vibration modes, the mechanical quality factor Qs are less than 50, corresponding to the facilitated polarization rotation.
机译：研究了弛豫体-PbTiO_3（PT）单晶中的剪切压电行为，涉及晶相。对于单域菱形-正方体（R），正交晶（O）和四方（T）弛豫-PT晶体，观察到高水平的剪切压电活性，d_15或d_24> 2000 pC N〜-1。高压电响应归因于吉布斯自由能在接近变质相边界的成分处变平，通过施加垂直电场很容易实现极化旋转。钙钛矿铁电晶体的剪切压电行为是使用现象学的方法，针对铁电-铁电相变和直流偏置场进行了讨论。本文还给出了单畴剪切压电响应与按畴工程配置的压电活动之间的关系。从应用角度出发，研究了剪切压电响应的温度和交流场驱动稳定性。在热力学上预期和实验证实温度无关的剪切压电响应（d_24，在O-T相转变温度为-50℃的范围内）；在锰改性的弛豫PT晶体中可获得相对较高的交流场驱动稳定性（5 kV cm“ 1）。对于所有厚度剪切振动模式，机械品质因数Qs均小于50，这与偏振旋转的促进相对应。

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  • 来源
    《Advanced Functional Materials》 |2011年第11期|p.2118-2128|共11页
  • 作者

    Fei Li; Shujun Zhang; Zhuo Xu; Xiaoyong Wei; Thomas R. Shrout;

  • 作者单位

    Electronic Materials Research Laboratory Xi'an Jiaotong University Xi'an 710049, P. R.China,Fei Li, Prof. S. J. Zhang, Prof. T. R. Shrout Materials Research Institute Pennsylvania State University University park, PA 16802, USA;

    Fei Li, Prof. S. J. Zhang, Prof. T. R. Shrout Materials Research Institute Pennsylvania State University University park, PA 16802, USA;

    Prof. Z. Xu, Prof. X. Y. Wei Electronic Materials Research Laboratory Xi'an Jiaotong University Xi'an 710049, P. R.China;

    Prof. Z. Xu, Prof. X. Y. Wei Electronic Materials Research Laboratory Xi'an Jiaotong University Xi'an 710049, P. R.China;

    Fei Li, Prof. S. J. Zhang, Prof. T. R. Shrout Materials Research Institute Pennsylvania State University University park, PA 16802, USA;

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