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Carbon Nanoparticles on Carbon Fabric for Flexible and High-Performance Field Emitters

机译:碳纤维上的碳纳米颗粒,用于柔性和高性能场致发射体

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摘要

Carbon nanoparticles (CNPs) are grown on flexible carbon fabric via a simple and low-cost flame synthesis process. The entire struture of the carbon fabric substrate retains its high flexibility after the growth of CNPs and can even be rolled-up and twisted to a large degree without affecting the electric characteristics. No appreciable changes in the conductance can be observed under different bending curvatures after hundreds of bending cycles. The thermal conductivity of the carbon fabric with CNPs is about 2.34 W m~-1 K~-1 about one order of magnitude higher than that of most polymer substrates. The field emitter fabricated using the structure has a low threshold electric field of around 2.8 V urn~-1, and a high field emission current density of 108 mA cm~-2, which is about two to four orders of magnitude higher than that of most polymer substrate-based flexible CNT field emitters. These results indicate that CNPs on carbon fabric have potential applications in flexible electronics devices and displays.
机译:碳纳米颗粒(CNP)通过简单且低成本的火焰合成工艺在柔性碳纤维上生长。碳纤维基材的整个结构在CNP增长后仍保持其高柔韧性,甚至可以在不影响电特性的情况下被卷起并在很大程度上扭曲。在数百次弯曲循环后,在不同的弯曲曲率下,均未观察到电导的明显变化。具有CNP的碳织物的热导率约为2.34W m-1 -1 K-1,比大多数聚合物基材的热导率高约一个数量级。使用该结构制造的场发射器具有约2.8 V urn〜-1的低阈值电场,以及108 mA cm〜-2的高场发射电流密度,比后者高约2-4个数量级。大多数基于聚合物基材的柔性CNT场发射器。这些结果表明碳纤维上的CNP在柔性电子设备和显示器中具有潜在的应用。

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  • 来源
    《Advanced Functional Materials》 |2011年第11期|p.2150-2154|共5页
  • 作者单位

    Wuhan National Laboratory for Optoelectronics (WNLO) and College of Optoelectronic Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan, 430074, P. R. China;

    Instrumental Analysis & Research Center Sun Yat-sen University Guangzhou, 510275, P. R. China;

    Instrumental Analysis & Research Center Sun Yat-sen University Guangzhou, 510275, P. R. China;

    Wuhan National Laboratory for Optoelectronics (WNLO) and College of Optoelectronic Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan, 430074, P. R. China;

    Wuhan National Laboratory for Optoelectronics (WNLO) and College of Optoelectronic Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan, 430074, P. R. China;

    Wuhan National Laboratory for Optoelectronics (WNLO) and College of Optoelectronic Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan, 430074, P. R. China;

    Instrumental Analysis & Research Center Sun Yat-sen University Guangzhou, 510275, P. R. China;

    K. Liu, Prof. X. J. Hu School of Power and Mechanical Engineering Wuhan University Wuhan, 430072, P. R. China;

    Wuhan National Laboratory for Optoelectronics (WNLO) and College of Optoelectronic Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan, 430074, P. R. China;

    K. Liu, Prof. X. J. Hu School of Power and Mechanical Engineering Wuhan University Wuhan, 430072, P. R. China;

    Wuhan National Laboratory for Optoelectronics (WNLO) and College of Optoelectronic Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan, 430074, P. R. China;

    Wuhan National Laboratory for Optoelectronics (WNLO) and College of Optoelectronic Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan, 430074, P. R. China,Prof. Z. L. Wang School of Materials Science and Engineering Georgia Institute ofTechnology Atlanta, Georgia 30332-0245, USA;

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