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Controlling Interface Intermixing and Properties of SrTiO_3-Based Superlattices

机译：基于SrTiO_3的超晶格的界面混合控制及性能

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摘要

By combining state-of-the-art microscopy, spectrosccopy, and first-principles calculations, atomic-scale intermixing behavior at heterointerfaces in SrTiO_3-based superlattices is investigated. It is found that Nb is confined to a unit-cell thickness without intermixing, whereas Ba diffuses only to the adjoining Nb-doped SrTiO_3 layer. It is revealed that the intermixing behaviors at the heterointerfaces are determined by not only the migration energy, but also by the vacancy-formation energy and the Fermi energy of each layer. Based on these results, we find a method to control the atomic-scale intermixing at the nonpolar heterointerfaces and clearly demonstrate the property improvements obtained by constructing an abrupt heterointerface.
机译：通过结合最新的显微镜，光谱学和第一性原理计算，研究了基于SrTiO_3的超晶格中异质界面处的原子级混合行为。发现Nb被限制在晶胞厚度而没有相互混合，而Ba仅扩散到邻接的掺Nb的SrTiO_3层。结果表明，异质界面处的混合行为不仅取决于迁移能，还取决于每一层的空位形成能和费米能。基于这些结果，我们找到了一种控制非极性异质界面原子级混合的方法，并清楚地证明了通过构造突变异质界面所获得的性能改进。

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  • 来源
    《Advanced Functional Materials》 |2011年第12期|p.2258-2263|共6页
  • 作者

    Teruyasu Mizoguchi; Hiromichi Ohta; Hak-Sung Lee; Nobuaki Takahashi; Yuichi Ikuhara;

  • 作者单位

    The University of Tokyo 153-8505, Tokyo, Japan, Institute of Engineering Innovation The University of Tokyo 113-8656, Tokyo, Japan;

    Graduate School of Engineering Nagoya University 464-8603, Nagoya, Japan;

    The University of Tokyo 113-8656, Tokyo, Japan;

    The University of Tokyo 113-8656, Tokyo, Japan;

    The University of Tokyo 113-8656, Tokyo, Japan, Nanostructures Research Laboratory Japan Fine Ceramics Center Nagoya 456-8587 Japan, and WPI advanced Institute for Materials Research Tohoku University Sendai 980-8577, Japan;

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