Response to 'Comment on 'High K Capacitors and OFET Gate Dielectrics from Self-Assembled BaTiO_3 and (Ba,Sr) TiO_3 Nanocrystals in the Superparaelectric Limit' - On the Superparaelectric State in BaTiO_3 Nanocrystals'

Stephen OBrien

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Response to 'Comment on 'High K Capacitors and OFET Gate Dielectrics from Self-Assembled BaTiO_3 and (Ba,Sr) TiO_3 Nanocrystals in the Superparaelectric Limit' - On the Superparaelectric State in BaTiO_3 Nanocrystals'

机译：对“关于在超顺电极限内自组装的BaTiO_3和（Ba，Sr）TiO_3纳米晶体的高K电容器和OFET栅极电介质的评论”的回应-关于BaTiO_3纳米晶体的超顺电态

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We are grateful for this discussion and to the editor. The term superparaelectric is somewhat of an analogy with superpara-magnetism, considered different from paramagnetism because it occurs below the Curie temperature of the material. Due to the anisotropy there are two favorable low-energy states for the nanoparticle and an energy barrier to flipping between the states, described by the Neel-Arrhenius equation, giving a k_BT dependence. Although, at room temperature, thermal fluctuations tend to "erase" the appearance of a magnetic dipole, an external field can quickly take advantage of this inherent functionality.

机译：我们感谢这次讨论和编辑。术语“超顺电”在某种程度上类似于超顺磁性，被认为与顺磁性不同，因为它发生在材料的居里温度以下。由于各向异性，对于纳米粒子存在两个有利的低能态，并且存在通过Neel-Arrhenius方程描述的在这些态之间翻转的能垒，从而给出了k_BT依赖性。尽管在室温下，热波动趋于“消除”磁偶极子的出现，但外部磁场可以迅速利用这种固有功能。

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《Advanced Functional Materials》 |2011年第17期|p.3212-3213|共2页
作者
Stephen OBrien;
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Department of Chemistry City College New York City University of New York, NY 10031;

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1. Comment on 'High K Capacitors and OFET Gate Dielectrics from Self-Assembled BaTiO_3 and (Ba,Sr)TiO_3 Nanocrystals in the Superparaelectric Limit' - On the Superparaelectric State in BaTiO_3 Nanocrystals [J] . Liliana Mitoseriu, Vincenzo Buscaglia Advanced Functional Materials . 2011,第17期

机译：关于“自组装的BaTiO_3和（Ba，Sr）TiO_3纳米晶体在超顺电极限中的高K电容器和OFET栅极电介质”的评论-关于BaTiO_3纳米晶体中的超顺电态
2. High K Capacitors and OFET Gate Dielectrics from Self-Assembled BaTiO_3 and (Ba,Sr)TiO_3 Nanocrystals in the Superparaelectric Limit [J] . Limin Huang, Zhang Jia, Ioannis Kymissis, Advanced Functional Materials . 2010,第4期

机译：自组装BaTiO_3和（Ba，Sr）TiO_3纳米晶体在超顺电极限中的高K电容器和OFET栅极电介质
3. Observing the superparaelectric limit of relaxor (Na_(1/2)Bi_(1/2))_(0.9)Ba_(0.1)TiO_3 nanocrystals [J] . Ramchandra Tiruvalam, Animesh Kundu, Andrey Soukhojak, Applied Physics Letters . 2006,第11期

机译：观察弛豫体（Na_（1/2）Bi_（1/2））_（0.9）Ba_（0.1）TiO_3纳米晶体的超顺电极限
4. Effect of a Boron Additive on the Microstructure and Dielectric Properties of BaTiO_3 Thin Films Formed by Nanocrystal Deposition [C] . Yoko Takezawa, Minoru Ryu, Yoshiki Iwazaki Electronics Division Meeting of the Ceramic Society of Japan . 2013

机译：硼添加剂对通过纳米晶体沉积形成的BATIO_3薄膜微观结构和介电性能的影响
5. Order–disorder degree of self-assembled clusters: Influence on photoluminescence emission and morphology of BaxSr1−xTiO3 nanocrystals [O] . Souza A.E., Silva R.A., Santos G.T.A., 2011

机译：自组装簇的有序无序度：对BaxSr1-xTiO3纳米晶体的光致发光发射和形貌的影响

Response to 'Comment on 'High K Capacitors and OFET Gate Dielectrics from Self-Assembled BaTiO_3 and (Ba,Sr) TiO_3 Nanocrystals in the Superparaelectric Limit' - On the Superparaelectric State in BaTiO_3 Nanocrystals'

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